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MP02X175 Series
MP02X175 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces January 2000 version, DS4478-3.0 DS4478-5.0 August 2001
FEATURES
s Dual Device Module s Electrically Isolated Package s Pressure Contact Construction s International Standard Footprint s Alumina (non-toxic) Isolation Medium
KEY PARAMETERS VDRM ITSM IT(AV)(per arm) Visol 1600V 6800A 175A 3000V
Code
Circuit
APPLICATIONS
s Motor Control s Controlled Rectifier Bridges s Heater Control s AC Phase Control
HBN Fig.1 Circuit diagrams HBT HBP
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 1600 1400 1200 1000 Conditions
MP02X175-16 MP02X175-14 MP02X175-12 MP02X175-10
Tvj = 125oC IDRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively
1 2 3
Lower voltage grades available.
ORDERING INFORMATION
Order As: MP02HBT175-16 or MP02HBT175-14 or MP02HBT175-12 or MP02HBT175-10 MP02HBP175-16 or MP02HBP175-14 or MP02HBP175-12 or MP02HBP175-10 MP02HBN175-16 or MP02HBN175-14 or MP02HBN175-12 or MP02HBN175-10 Note: When ordering, please use the complete part number.
Module type code: MP02. For further information see Package Details. Fig. 2 Electrical connections - (not to scale)
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MP02X175 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) Parameter Mean on-state current Test Conditions Half wave resistive load Tcase = 75C Tcase = 85C IT(RMS ITSM I2t ITSM I2t Visol RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Tcase = 75C 10ms half sine, Tj = 125C VR = 0 10ms half sine, Tj = 125C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 175 150 275 6.8 231 x 103 5.5 150 x 103 3000 Units A A A kA A2s kA A2s V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case (per thyristor or diode) dc Half wave 3 Phase Rth(c-hs) Thermal resistance - case to heatsink (per thyristor or diode) Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 Weight (nominal) Mounting torque = 5Nm with mounting compound Reverse (blocking) -40 125 125 C C Test Conditions Min. Max. 0.19 0.20 0.21 0.07 Units C/kW C/kW C/kW C/kW
6 (55) Nm (lb.ins) 5 (44) Nm (lb.ins) 350 g
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MP02X175 Series
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tj = 125C To 67% VDRM, Tj = 125C From 67% VDRM to 500A, gate source 10V, 5, tr = 0.5s, Tj = 125C VT(TO) rT Threshold voltage On-state slope resistance At Tvj = 125C. See note 1 At Tvj = 125C. See note 1 1.05 0.8 V m Repetitive 50Hz Min. Max. 30 1000 500 Units mA V/s A/s
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
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MP02X175 Series
15
2000 Measured under pulse conditions Tj = 125C
Peak half sine wave on-state current - (kA)
180
Instantaneous on-state current, IT - (A)
1500
10
I2t value - (A2s x 103)
140
1000
5
I2t 100
500
0 0.5
0 1
10 ms
1
2 3 45
10
60 20 30 50
1.5 1.0 2.0 Instantaneous on-state voltage, VT - (V)
2.5
cycles at 50Hz Duration
Fig. 3 Maximum (limit) on-state characteristics
100
Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125C)
0.3 Rth(j-hs)
Table gives pulse power PGM in watts
Pulse Pulse Frequency Hz Width 100 400 50 s
VFGM
Gate trigger voltage, VGT - (V)
Thermal Impedance - (C/W)
10
20 25 100 500 1ms 10ms
100 100 100 100 100 10
100 100 100 100 50 -
100 100 100 25 -
75W 50W 10W 5W
100W
0.2
Rth(j-c)
Tj = 25C
1.0
pp er lim it
99
%
Tj = -40C
Tj = 125C
0.1
U
VGD
Lo
w
l er
im
it
1%
0.1 0.001
0.01
0.1
1.0
10
IFGM
0 0.001
0.01
Gate trigger current, IGT - (A)
0.1 1.0 Time - (s)
10
100
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
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MP02X175 Series
350
350 d.c.
300
300 180
On-state power loss per arm - (W)
On-state power loss per arm - (W)
250 120 200 90 150 30 100 60
250 90 200 60 150 30
180
120
100
50
50
0 0
50
200 250 100 150 Mean on-state current, IT(AV) - (A)
300
0 0
50
100 150 200 250 Mean on-state current, IT(AV) - (A)
300
Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz
140
Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz
140
Maximum permissible case temperature - (C)
100
80
Maximum permissible case temperature - (C)
120
120
100
80 d.c. 60
60
40
40
20 30 0 0 20 40 60 90 120 180
20 30 60 90 120 180
60 80 100 120 140 160 180 200 220 240 Mean on-state current, IT(AV) - (A)
0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 Mean on-state current, IT(AV) - (A)
Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz
Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz
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MP02X175 Series
1400 Rth(hs-a) C/W 1200 0.02 1000 R- Load
Total power - (W)
0.04 800 L- Load 600 0.08 0.10 0.12 0.15 0.20 0.30 0.40
400
200
0 0
20
40
60
80
100
120
0
100
Maximum ambient temperature - (C)
200 300 D.C. output current - (A)
400
Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal)
1200 Rth(hs-a) C/W 1000 0.04 0.02 R & L - Load
800
Total power - (W)
0.08 0.10 600 0.12 0.15 400 0.20 0.30 200 0.40
0 0
20
40 60 80 100 120 Maximum ambient temperature - (C)
0
100
200 300 D.C. output current - (A)
400
Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal)
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MP02X175 Series
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
23 2 holes O6.5 23 K2 24 15 5 G2 K2 G2 12.8 1 24 34 2 Circuit type: HBN G1 K1 K1 3 Circuit type: HBP G1 K1 K2 G2 30 1 2 Circuit type: HBT 94 3 G1 1 2 3 3
13 80 3x M6 1 2
Nominal weight: 350g Recommended fixings for mounting: M6 socket head cap screws Recommended mounting torque: 6Nm (55lb.ins) Recommended torque for electrical connections: 5Nm (44lb.ins) Maximum torque for electrical connections: 8Nm (70lb.ins) Module outline type code: MP02
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base temperature at 75C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32in) and a flatness within 0.05mm (0.002") are recommended. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or `T' slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.
Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain.
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MP02X175 Series
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4478-5 Issue No. 5.0 August 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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