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| MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS's for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations. http://onsemi.com * * * * Mains features include: High and Excellent Gain Linearity Fast and Very Tight Switching Times Parameters tsi and tfi Very Stable Leakage Current due to the Planar Structure High Reliability 30 AMPERES 1000 VOLTS BVCES 450 VOLTS BVCEO 250 WATTS 1 2 MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak (Note 1.) Base Current - Continuous - Peak (Note 1.) Total Power Dissipation @ TC = 25_C Derate Above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC IB PD TJ, Tstg Value 450 1000 1000 9.0 30 45 6.0 10 250 2.0 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM MJW 18020 LLYWW 1 BASE 3 EMITTER Watts W/_C _C 2 COLLECTOR MJW18020= Device Code LL = Location Code Y = Year WW = Work Week THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds Symbol RJC RJA TL Max 0.5 50 275 Unit _C/W ORDERING INFORMATION _C/W _C Device MJW18020 Package TO-247 Shipping 30 Units/Rail 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 January, 2002 - Rev. 0 Publication Order Number: MJW180203/D MJW18020 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Emitter Cutoff Current (VCE = 9 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 3 Adc, VCE = 5 Vdc) (TC = 125C) (IC = 10 Adc VCE = 2 Vdc) (TC = 125C) (IC = 20 Adc VCE = 2 Vdc) (TC = 125C) (IC = 10 mAdc VCE = 5 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 20 Adc, IB = 4 Adc) VBE(sat) VCE(sat) (TC = 125C) (IC = 20 Adc, IB = 4 Adc) (TC = 125C) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Input Capacitance (VEB = 8.0) fT Cob Cib - - - 13 300 7000 - 500 9000 MHz pF pF - - - - 0.2 0.3 0.5 0.9 0.6 - 1.5 2.0 hFE 14 - 8 5 5.5 4 14 - 30 16 14 9 7 25 0.97 1.15 34 - - - - - 1.25 1.5 Vdc Vdc IEBO - - VCEO(sus) ICEO ICES 450 - - - - - - 100 100 500 100 Vdc Adc Adc Adc Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 s) Turn-On Time Storage Time Fall Time Turn-Off Time Turn-On Time Storage Time Fall Time Turn-Off Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time (IC = 20 Adc, IB1 = IB2 = 4 Adc) (IC = 10 Adc, IB1 = IB2 = 2 Adc) ( (IC= 20 Adc, IB1 = IB2 = 4 Adc, , , Vcc V = 125 V) (IC = 10 Adc, IB1 = IB2 = 2 Adc, Vcc = 125 V) tOn ts tf tOff tOn ts tf tOff tfi tsi tc tfi tsi tc - - - - - - - - - - - - - - 540 4.75 380 5.2 965 2.9 350 3.25 142 4.75 320 350 3.0 500 750 6 500 6.5 1200 3.5 500 4 250 6 500 500 3.5 750 ns s ns s ns s ns s ns s ns ns s ns SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 H) http://onsemi.com 2 MJW18020 TYPICAL CHARACTERISTICS 100 TJ = 125C TJ = 25C 100 TJ = 125C TJ = 25C HFE, DC CURRENT GAIN TJ = -20C 10 VCE = 2.0 V HFE, DC CURRENT GAIN TJ = -20C 10 VCE = 5.0 V 1.0 0.01 0.1 1.0 10 100 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain, VCE = 2.0 V 100.0 Ic/Ib = 5.0 VCE, VOLTAGE (VOLTS) 10.0 VCE, VOLTAGE (VOLTS) 10.0 100.0 Figure 2. DC Current Gain, VCE = 5.0 V Ic/Ib = 10 1.0 TJ = -20C 0.1 TJ = 125C 1.0 TJ = -20C TJ = 125C 0.1 TJ = 25C 0.0 0.001 TJ = 25C 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) 0.0 0.001 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) Figure 3. Typical Collector-Emitter Saturation Voltage, IC/IB = 5.0 10.0 Ic/Ib = 5.0 VBE, VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS) 10.0 Figure 4. Typical Collector-Emitter Saturation Voltage, IC/IB = 10 Ic/Ib = 10 TJ = -20C 1.0 TJ = 25C TJ = -20C 1.0 TJ = 25C TJ = 125C 0.1 0.001 TJ = 125C 0.1 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 Figure 5. Typical Base-Emitter Saturation Voltage, IC/IB = 5.0 Figure 6. Typical Base-Emitter Saturation Voltage, IC/IB = 10 http://onsemi.com 3 MJW18020 TYPICAL CHARACTERISTICS 100000 100.00 IC, COLLECTOR CURRENT (AMPS) 1.0 ms Extended SOA 5 ms 1.00 1 ms 10 ms C, CAPACITANCE (pF) 10.00 DC 10000 Cib 1000 Cob 100 0.10 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 7. Typical Capacitance Figure 8. Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) TC v 125C Ic/Ib > 4 LC = 500 mH 30 20 -1.5 V 10 VBE = 0 V 0 0 200 400 600 800 1000 -5 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Reverse Bias Safe Operating Area http://onsemi.com 4 MJW18020 PACKAGE DIMENSIONS TO-247 CASE 340K-01 ISSUE C 0.25 (0.010) M -Q- TBM U A 1 -T- E -B- L R 2 3 DIM A B C D E F G H J K L P Q R U V C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 K P -Y- V F D 0.25 (0.010) M H J G YQ S STYLE 3: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 5 MJW18020 Notes http://onsemi.com 6 MJW18020 Notes http://onsemi.com 7 MJW18020 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJW18020/D |
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