View BYT200PIV-400_44184.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
BYT200PIV-400
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS
n
2 x100 A 400 V 1.4 V
A1 A2 K1 K2
2 1
1= 2= 3= 4=
A1 K1 A2 K2
4
n
n
n
LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE : 2500 VDC CAPACITANCE 42pF
3
DESCRIPTION High current power rectifier diode suited for Switched Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in a medi um v oltage high c urrent applic ations such as welding equ ipment and Telecom su pplies. ABSOLUTE MAXIMUM RATING Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Maximum junction temperature Tc = 80C = 0.5 tp = 10 ms Sinusoidal tp (R) 10 s
ISOTOPTM
Value 400 150 100 600 800 - 40 to + 150 150
Unit V A A A A C C
ISOTOP is a trademark of STMicroelectronics
May 2000 - Ed: 3C
1/5
BYT200PIV-400
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per leg Total Coupling Value 0.55 0.33 0.1 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C
Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2%
Min.
Typ. 4
Max. 120 12 1.6 1.4
Unit A mA V
VR = VRRM IF = 100 A IF = 100 A 0.95
RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions IF=0.5A IR=1A Irr=0.25A IF=1A dI/dt= -50A/s Vr=30V dIF/dt=-200A/s VR=400V dIF/dt=-200A/s VR=400V Tj=125C IF=100A Tj=125C IF=100A 0.25 500 12 ns V Min. Typ. 55 100 40 A Max. Unit ns
IRM S factor tfr VFP
Reverse recovery current Softness factor Forward recovery time Peak forward voltage
IF=100A dIF/dt=500A/s Measured at 1.1 x VF max. Tj=25C
To evaluate the conduction losses use the following equation : P = 0.8 x IF(AV) + 0.00228 x IF2(RMS)
2/5
BYT200PIV-400
Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode).
PF(av)(W) 140 120 100 80 60 40 20 0 0
100
= 0.05 = 0.1 = 0.2 = 1
IM(A) 500
= 0.5
400 300 200
P=100W P=75W P=125W P=150W
IF(av) (A) 10 20 30 40 50 60 70 80 90 100 110 120 130
0 0.0 0.1 0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Average forward current versus ambient temperature ( = 0.5, per diode).
Fig. 4: Non repetitive surge peak forward current versus overload duration (per diode).
IF(av)(A) 120
Rth(j-a)=Rth(j-c)
IM(A) 700 600 500 400 300
Tc=50C Tc=75C
100 80 60 40 20 Tamb(C) 0 0 25 50 75 100 125 150
Rth(j-a)=2C/W
200 100 0 1E-3 1E-2
Tc=100C
t(s) 1E-1 1E+0
Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Fig. 6: Forward voltage drop versus forward current (maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5
IFM(A) 500 100
0.5
= 0.2
Tj=125C
Tj=25C
= 0.1
0.2
Single pulse
10
tp(s) 1E-2 1E-1 1E+0
VFM(V) 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1 1E-3
3/5
BYT200PIV-400
Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Recovery charges versus dIF/dt (per diode).
C(pF) 500 450 400 350 300 250 200 150 100 1 VR(V) 10 100 200 0.5 2.0 1.5 1.0
F=1MHz Tj=25C
Qrr(C) 3.0 2.5
IF=IF(av) 90% confidence Tj=125C
dIF/dt(A/s) 0.0 0 100 200 300 400 500
Fig. 9: Recovery current versus dIF/dt (per diode).
Fig. 10: Transient peak forward voltage versus dIF/dt (per diode).
IRM(A) 50 45 40 35 30 25 20 15 10 5 0
14
IF=IF(av) 90% confidence Tj=125C
VFP(V) 12 10 8 6 4
IF=IF(av) 90% confidence Tj=125C
dIF/dt(A/s) 0 100 200 300 400 500
2 0 0 100 200
dIF/dt(A/s) 300 400 500 600 700 800
Fig. 11: Dynamic parameters versus junction temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=125C] 1.25 1.00 0.75 0.50
Qrr IRM
0.25 Tj(C) 0.00 0 25 50 75 100 125 150
4/5
BYT200PIV-400
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S
n
Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30
Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5

▲Up To Search▲

Price & Availability of BYT200PIV-400

	To Download BYT200PIV-400 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .