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1pxfs.04'&5 838 11 (fofsbm%ftdsjqujpo 'fbuvsft "qqmjdbujpot 1jo$pogjhvsbujpo 1jo"ttjhonfou &rvjwbmfou$jsdvju "ctpmvuf.byjnvn3bujoht the xp161a11a1pr is an n-channel power mos fet with low on-state resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. a gate protect diode is built-in to prevent static damage. the small sot-89 package makes high density mounting possible. low on-state resistance : rds(on)=0.065 ? (vgs=10v) : rds(on)=0.105 ? (vgs=4.5v) ultra high-speed switching gate protect diode built-in operational voltage : 4.5v high density mounting : sot-89 notebook pcs cellular and portable phones on-board power supplies li-ion battery systems n-channel power mos fet dmos structure low on-state resistance: 0.105 ? (max) gate protect diode built-in ultra high-speed switching sot-89 package 405 5017*&8 (4 % /$iboofm.04'&5 efwjdfcvjmujo
parameter drain-source voltage gate-source voltage drain current (dc) drain current (pulse) reverse drain current continuous channel power dissipation (note) channel temperature storage temperature vdss vgss id idp idr pd tch tstg 30 20 4 16 4 2 150 -55~150 v v a a a w ?c ?c symbol ratings units ta=25?c when implemented on a ceramic pcb note: pin number pin name function 1 3 2 g s d gate source drain 4@91""131.??
91""13 839 11 &mfdusjdbm$ibsbdufsjtujdt dc characteristics ta=25 : parameter units gate-source cut-off voltage vgs(off) 1.0 2.5 v 0.1050.075id=2a, vgs=4.5v ? gate-source leakage current igss a 10 forward transfer admittance (note) 5.5 s body drain diode forward voltage 0.85 1.1 v drain cut-off current idss 10 a vf vds=30v, vgs=0v id=1ma, vds=10v id=2a, vds=10v if=4a, vgs=0v vgs= 20v, vds=0v drain-source on-state resistance (note) rds(on) ? id=2a, vgs=10v 0.05 0.065 symbol conditions maxmin typ parameter units feedback capacitance crss pf output capacitance coss pf input capacitance ciss 55 150 270 pf vds=10v, vgs=0v f=1mhz symbol conditions maxmin typ dynamic characteristics ta=25 : effective during pulse test. note: yfs parameter units fall time tf ns rise time tr ns turn-on delay time td (on) 15 turn-off delay time td (off) ns 35 15 10ns vgs=5v, id=2a vdd=10v symbol conditions maxmin typ switching characteristics ta=25 : parameter units rth (ch-a) thermal resistance (channel-ambience) 62.5 : /w implement on a ceramic pcb symbol conditions maxmin typ thermal characteristics 4@91""131.??
91""13 840 11 5zqjdbm1fsgpsnbodf$ibsbdufsjtujdt drain-source on-state resistance :rds (on) ( ? ) ambient temp.:topr ( : ) drain-source on-state resistance vs. ambient temperature pulse test " " 7 7ht17 *e1" " gate-source cut-off voltage variance :vgs (off) variance (v) ambient temp.:topr ( : ) gate-source cut-off voltage variance vs. ambient temperature vds=10v, id=1ma drain-source voltage:vds (v) drain current vs. drain-source voltage pulse test, ta=25 : 7 7ht17 drain current:id (a) 7 7 7 7 7 drain current:id (a) gate-source voltage:vgs (v) drain current vs. gate-source voltage vds=10v, pulse test 5b1? ? ? drain-source on-state resistance :rds (on) ( ? ) gate-source voltage:vgs (v) drain-source on-state resistance vs. gate-source voltage pulse test, ta=25 : *e1" " drain-source on-state resistance :rds (on) ( ? ) drain current:id (a) drain-source on-state resistance vs. drain current pulse test, ta=25 : 7ht17 7 4@91""131.??
91""13 841 11 7et7 *e" 5b? 7 standardized transition thermal resistance vs. pulse width 1vmtf8jeui18 t
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5b? 1vmtf5ftu gate-source voltage vs. gate charge reverse drain current vs. source-drain voltage 7ht7 7 $bqbdjubodf$ q'
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capacitance vs. drain-source voltage 7ht17 g1.)[ 5b1? $jtt $ptt $stt 4xjudijoh5jnfu ot
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switching time vs. drain current 7ht17 7ee7 181t evuz 5b1? ug us ue pgg ue po 4@91""131.??

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