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GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
AM42-0040
GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz
Features
* * * * * High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ. 50 Input/Output Broadband Matched High Performance Ceramic Bolt Down Package
CR-15
Description
M/A-COM's AM42-0040 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. M/A-COM's AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full chip passivation for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications.
Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = 0.005 .XX = 0.010
Ordering Information
Part Number AM42-0040 Package Ceramic Bolt Down Package
Electrical Specifications: TA = +25C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Frequency = 5.9 to 6.4 GHz
Parameter Linear Gain Input VSWR Output VSWR Output Power Output Power vs. Frequency Output Power vs. Temperature (with respect to TA=+25C) Drain Bias Current Gate Bias Voltage Gate Bias Current Thermal Resistance Second Harmonic Third Harmonic Abbv. GL VSWRIN VSWROUT PSAT PSAT PSAT IDD VGG GG JC f2 f3 Test Conditions PIN -10 dBm PIN -10 dBm PIN -10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. TA= -40C to +70C PIN = +10 dBm PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. 25C Heat Sink PIN = +10 dBm, IDD=1050 mA Typ. PIN = +10 dBm, IDD=1050 mA Typ. Units dB -- -- dBm dB dB mA V mA C/W dBc dBc Min. 27 -- -- 31.7 -- -- 900 -2.4 -- -- -- -- Typ. 30 2.3:1 3.0:1 33.0 1.0 0.4 1050 -1.2 5 5.6 -35 -45 Max. -- 2.7:1 -- 34.3 1.5 -- 1100 -0.4 20 -- -- --
V2.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
Absolute Maximum Ratings
Parameter Input Power VDD VGG VDD - VGG IDD Channel Temperature Storage Temperature
1,2,3,4
Typical Bias Configuration
V DD
4,5,6,7
Absolute Maximum +23 dBm +12 Volts -3 Volts 12 Volts 1700 mA -40C to +85C -65C to +150C
3.3 F
10 0.01 F
1. Exceeding any one or a combination of these limits may cause permanent damage. 2. Case Temperature (TC) = +25C. 3. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connecting +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc supply voltage will appear at the RF ports. 6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads.
3 AM42-0040 RF IN 1.0 F
8 RF OUT
2,4,7,9 GND
5 V
GG
Pin Configuration
Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name N/C GND RF In GND VGG N/C GND RF Out GND VDD Description No Connection DC and RF Ground RF Input DC and RF Ground Gate Supply No Connection DC and RF Ground RF Output DC and RF Ground Drain Supply
V2.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
Typical Performance @ +25C
40 30 Magnitude (dB) 20 Gain (dB) 10 0 -10 -20 -30 -40 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz)
Linear Gain vs. Frequency
0 -5 -10 -15 -20 -25 -30 -35
Input and Output Return Loss vs. Frequency
S22
S11
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5 7.6
Frequency (GHz)
35 30 POUT (dBm) 25 20 15 10 5 0
Output Power vs Frequency @ PIN = +10 dBm
30 25 PAE (%) 20 15 10 5 0
Power Added Efficiency (PAE) vs. Frequency @ PIN = +10 dBm
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
Frequency (GHz)
8.0
Frequency (GHz)
35.0 34.5 34.0 33.5 33.0 32.5 32.0 31.5 31.0 30.5 30.0
Output Power vs. Input Power @ 6.15 GHz
Power Added Efficiency vs. Input Power @ 6.15 GHz 25
20 PAE (%) 15 10 5 0
POUT (dBm)
0
1
2
3
4
5
6 7 8 9 10 11 12 13 14 PIN (dBm)
0
1
2
3
4
5
678 PIN (dBm)
9
10 11 12 13 14
V2.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
8.0
9.0
GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz
AM42-0040
V2.00 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.

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