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| HS-1120RH August 1996 Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust Description The HS-1120RH is a radiation hardened, high speed, wideband, fast settling current feedback amplifier. These devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. Built with Intersil' proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. The HS-1120RH's wide bandwidth, fast settling characteristic, and low output impedance, make this amplifier ideal for driving fast A/D converters. Additionally, it offers offset voltage nulling capabilities as described in the "Offset Adjustment" section of this datasheet. Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Degree Differential Gain/Phase specifications (RL = 75). Detailed electrical specifications are contained in SMD 5962F9675601VPA, available on the Intersil Website or AnswerFAX systems (document #967560) A Cross Reference Table is available on the Intersil Website for conversion of Intersil Part Numbers to SMDs. The address is (http://www.intersil.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hardened Products. Features * Electrically Screened to SMD 5962F9675601VPA * MIL-PRF-38535 Class V Compliant * Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ) * Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . 2300V/s (Typ) * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ) * Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ) * High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ) * Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ) * Total Gamma Dose. . . . . . . . . . . . . . . . . . 300K RAD (Si) * Latch Up . . . . . . . . . . . . . . . . . . . None (DI Technology) Applications * Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers * RF/IF Signal Processing * Flash A/D Driver * Imaging Systems Ordering Information PART NUMBER 5962F9675601VPA HFA1100IJ (Sample) HFA11XXEVAL TEMP. RANGE (oC) -55 to 125 -40 to 85 PACKAGE 8 Ld CERDIP 8 Ld CERDIP PKG. NO. GDIP1-T8 F8.3A Evaluation Board Pinout HS-1120RH MIL-STD-1835, GDIP1-T8 (CERDIP) TOP VIEW BAL -IN +IN V- 1 2 3 4 8 NC V+ OUT BAL + 7 6 5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 File Number 4101.1 1 HS-1120RH Application Information Optimum Feedback Resistor The enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HS-1120RH in various gains. Although the bandwidth dependency on closed loop gain isn't as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier's unique relationship between bandwidth and RF . All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF , in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier's bandwidth is inversely proportional to RF . The HS-1120RH design is optimized for a 510 RF at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so RF can be decreased in a tradeoff of stability for bandwidth. The table below lists recommended RF values for various gains, and the expected bandwidth. GAIN (ACL) -1 +1 +2 +5 +10 +19 BANDWIDTH (MHz) 580 850 670 RS () 50 45 Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier's phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing RS as CLincreases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, RS = 50, CL = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1, RS = 5, CL = 340pF. RF () 430 510 360 150 180 270 40 35 30 25 20 15 10 AV = +1 520 240 125 PC Board Layout The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10F) tantalum in parallel with a small value (0.1F) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground seen by the amplifier's inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under traces connected to -IN, and connections to -IN should be kept as short as possible. An example of a good high frequency layout is the Evaluation Board shown in Figure 2. 5 A = +2 V 0 0 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF) FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE Evaluation Board The performance of the HS-1120RH may be evaluated using the HFA11XXEVAL Evaluation Board. The layout and schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office. Offset Adjustment The output offset voltage of the HS-1120RH may be nulled via connections to the BAL pins. Unlike a voltage feedback amplifier, offset adjustment is accomplished by varying the sign and/or magnitude of the inverting input bias current (-IBIAS). With voltage feedback amplifiers, bias currents are matched and bias current induced offset errors are nulled by matching the impedances seen at the positive and negative inputs. Bias 2 HS-1120RH currents are uncorrelated on current feedback amplifiers, so this technique is inappropriate. -IBIAS flows through RF causing an output offset error. Likewise, any change in -IBIAS forces a corresponding change in output voltage, providing the capability for output offset adjustment. By nulling -IBIAS to zero, the offset error due to this current is eliminated. In addition, an adjustment limit greater than the -IBIAS limit allows the user to null the contributions from other error sources, such as VIO, or +IN source impedance. For example, the excess adjust current of 50A [IBNADJ (Min) - IBSN (Max)] allows for the nulling of an additional 26mV of output offset error (with RF = 510) at room temperature. The amount of adjustment is a function of RF , so adjust range increases with increased RF . If allowed by other considerations, such as bandwidth and noise, RF can be increased to provide more adjustment range. The recommended offset adjustment circuit is shown in Figure 3. 500 R1 1 50 IN 0.1F -5V 2 3 4 10F 500 VH 8 7 50 6 5 GND GND OUT VL 0.1F 10F +5V FIGURE 2A. SCHEMATIC VH 1 +IN VL OUT V+ VGND FIGURE 2B. TOP LAYOUT FIGURE 2C. BOTTOM LAYOUT FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT 510 2 - 6 VIN HS-1120RH 3+ 5 1 4 10K VOUT V- FIGURE 3. OFFSET VOLTAGE ADJUSTMENT CIRCUIT 3 HS-1120RH Typical Performance Characteristics Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS Input Offset Voltage (Note 1) Average Offset Voltage Drift VIO CMRR VIO PSRR +Input Current (Note 1) Average +Input Current Drift -Input Current (Note 1) Average -Input Current Drift -Input Current Adjust Range +Input Resistance -Input Resistance Input Capacitance Input Noise Voltage (Note 1) +Input Noise Current (Note 1) -Input Noise Current (Note 1) Input Common Mode Range Open Loop Transimpedance Output Voltage AV = -1 AV = -1, RL = 100 AV = -1, RL = 100 Output Current (Note 1) AV = -1, RL = 50 AV = -1, RL = 50 DC Closed Loop Output Resistance Quiescent Supply Current (Note 1) -3dB Bandwidth (Note 1) RL = Open AV = -1, RF = 430, VOUT = 200mVP-P AV = +1, RF = 510, VOUT = 200mVP-P AV = +2, RF = 360, VOUT = 200mVP-P Slew Rate AV = +1, RF = 510, VOUT = 5VP-P AV = +2, VOUT = 5VP-P Full Power Bandwidth Gain Flatness (Note 1) VOUT = 5VP-P To 30MHz, RF = 510 To 50MHz, RF = 510 To 100MHz, RF = 510 Linear Phase Deviation (Note 1) 2nd Harmonic Distortion (Note 1) To 100MHz, RF = 510 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2VP-P 3rd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2VP-P 3rd Order Intercept (Note 1) 1dB Compression Reverse Isolation (S12) 100MHz, RF = 510 100MHz, RF = 510 40MHz, RF = 510 100MHz, RF = 510 600MHz, RF = 510 f = 100kHz f = 100kHz f = 100kHz VCM = 0V Versus Temperature VCM = 2V VS = 1.25V VCM = 0V Versus Temperature VCM = 0V Versus Temperature VCM = 0V VCM = 2V CONDITIONS TEMPERATURE +25oC Full +25oC +25oC +25oC Full +25oC Full +25oC +25oC +25oC +25oC +25oC +25oC +25oC Full +25oC +25oC Full +25oC to +125oC -55oC to 0oC +25oC Full +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC TYPICAL 2 10 46 50 25 40 12 40 200 50 16 2.2 4 18 21 3.0 500 3.3 3.0 65 50 0.1 24 580 850 670 1500 2300 220 0.014 0.05 0.14 0.6 -55 -49 -44 -84 -70 -57 30 20 -70 -60 -32 UNITS mV V/oC dB dB A nA/oC A nA/oC A k pF nV/Hz pA/Hz pA/Hz V k V V mA mA mA MHz MHz MHz V/s V/s MHz dB dB dB Degrees dBc dBc dBc dBc dBc dBc dBm dBm dB dB dB 4 HS-1120RH Typical Performance Characteristics PARAMETERS Rise and Fall Time (Continued) Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified (Continued) CONDITIONS VOUT = 0.5VP-P VOUT = 2VP-P Overshoot (Note 1) Settling Time (Note 1) VOUT = 0.5VP-P, Input tR/tF = 550ps To 0.1%, VOUT = 2V to 0V, RF = 510 To 0.05%, VOUT = 2V to 0V, RF = 510 To 0.02%, VOUT = 2V to 0V, RF = 510 Differential Gain Differential Phase Overdrive Recovery Time NOTE: 1. See Typical Performance Curve for more information. AV = +2, RL = 75, NTSC AV = +2, RL = 75, NTSC RF = 510, VIN = 5VP-P TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC TYPICAL 500 800 11 11 19 34 0.03 0.05 7.5 UNITS ps ps % ns ns ns % Degrees ns Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified 120 90 OUTPUT VOLTAGE (mV) 60 30 0 -30 -60 -90 -120 5ns/DIV. OUTPUT VOLTAGE (V) 1.2 0.9 0.6 0.3 0 -0.3 -0.6 -0.9 -1.2 5ns/DIV. FIGURE 4. SMALL SIGNAL PULSE RESPONSE (AV = +2) FIGURE 5. LARGE SIGNAL PULSE RESPONSE (AV = +2) GAIN (dB) NORMALIZED 0 -3 -6 -9 -12 GAIN AV = +1 AV = +2 AV = +6 AV = +11 PHASE (DEGREES) PHASE AV = +1 AV = +2 AV = +6 AV = +11 0.3 1 10 100 FREQUENCY (MHz) 1K 0 -90 -180 -270 -360 GAIN (dB) NORMALIZED 0 -3 -6 -9 -12 GAIN AV = -1 AV = -5 AV = -10 AV = -20 180 AV = -1 AV = -5 AV = -10 AV = -20 90 0 -90 -180 1K PHASE (DEGREES) PHASE 0.3 1 10 100 FREQUENCY (MHz) FIGURE 6. NON-INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) FIGURE 7. INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) 5 HS-1120RH Typical Performance Curves +6 GAIN (dB) +3 0 -3 -6 PHASE GAIN RL = 100 RL = 50 PHASE (DEGREES) RL = 50 RL = 100 RL = 1k RL = 100 RL = 1k 0.3 1 10 100 1K RL = 1k VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) GAIN (dB) NORMALIZED +3 0 -3 -6 PHASE RL = 50 RL = 100 GAIN RL = 1k RL = 100 RL = 50 0 -90 RL = 1k RL = 100 RL = 1k -180 -270 -360 1K PHASE (DEGREES) 1K 0 -90 -180 -270 -360 0.3 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +1, VOUT = 200mVP-P) FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +2, VOUT = 200mVP-P) +20 +10 GAIN (dB) 0 -10 -20 -30 0.160VP-P 0.500VP-P 0.920VP-P 1.63VP-P GAIN (dB) NORMALIZED +20 +10 0 -10 -20 -30 0.32VP-P 1.00VP-P 1.84VP-P 3.26VP-P 0.3 1 10 FREQUENCY (MHz) 100 1K 0.3 1 10 100 FREQUENCY (MHz) FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +1) FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +2) GAIN (dB) NORMALIZED +20 +10 0 -10 -20 -30 0.96 VP-P TO 950 BANDWIDTH (MHz) 900 850 800 750 700 3.89 VP-P 0.3 1 10 100 FREQUENCY (MHz) 1K -50 -25 0 +25 +50 +75 TEMPERATURE (oC) +100 +125 FIGURE 12. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +6) FIGURE 13. -3dB BANDWIDTH vs TEMPERATURE (AV = +1) 6 HS-1120RH Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) +2.0 +1.5 DEVIATION (DEGREES) 0 GAIN (dB) -0.05 -0.10 -0.15 -0.20 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 100 0 15 30 45 60 75 90 105 120 135 150 FREQUENCY (MHz) FIGURE 14. GAIN FLATNESS (AV = +2) FIGURE 15. DEVIATION FROM LINEAR PHASE (AV = +2) 40 35 INTERCEPT POINT (dBm) 1 6 11 16 21 26 TIME (ns) 31 36 41 46 30 25 20 15 10 5 0 -4 0 100 200 300 FREQUENCY (MHz) 400 0.6 SETTLING ERROR (%) 0.4 0.2 0 -0.2 -0.4 -0.6 FIGURE 16. SETTLING RESPONSE (AV = +2, VOUT = 2V) FIGURE 17. 3rd ORDER INTERMODULATION INTERCEPT (2-TONE) -30 -35 DISTORTION (dBc) -40 -45 -50 -55 -60 -65 -70 -5 -3 -1 1 3 5 7 9 OUTPUT POWER (dBm) 11 13 15 30MHz 50MHz 100MHz -30 -40 -50 100MHz -60 -70 -80 -90 30MHz -100 -110 -5 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) 50MHz DISTORTION (dBc) FIGURE 18. 2nd HARMONIC DISTORTION vs POUT FIGURE 19. 3rd HARMONIC DISTORTION vs POUT 7 HS-1120RH Typical Performance Curves 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) 35 30 VOUT = 1VP-P OVERSHOOT (%) 25 20 15 10 5 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 RF = 360 VOUT = 0.5VP-P RF = 360 VOUT = 2VP-P OVERSHOOT (%) RF = 360 VOUT = 1VP-P VOUT = 0.5VP-P VOUT = 2VP-P RF = 510 VOUT = 2VP-P RF =510 VOUT = 1VP-P RF = 510 VOUT = 0.5VP-P 400 500 600 700 800 900 1000 INPUT RISE TIME (ps) INPUT RISE TIME (ps) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +1) FIGURE 21. OVERSHOOT vs INPUT RISE TIME (AV = +2) 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 360 400 440 480 520 560 600 FEEDBACK RESISTOR () 640 680 25 24 SUPPLY CURRENT (mA) 23 22 21 20 19 18 -60 -40 -20 0 +20 +40 +60 +80 +100 +120 TEMPERATURE (oC) FIGURE 22. OVERSHOOT vs FEEDBACK RESISTOR (AV = +2, tR = 200ps, VOUT = 2VP-P) OVERSHOOT (%) FIGURE 23. SUPPLY CURRENT vs TEMPERATURE 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 5 6 7 8 9 TOTAL SUPPLY VOLTAGE (V+ - V-, V) 10 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 -60 -40 -20 +IBIAS VIO -IBIAS 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) 0 +20 +40 +60 +80 +100 +120 TEMPERATURE (oC) FIGURE 24. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 25. VIO AND BIAS CURRENTS vs TEMPERATURE 8 BIAS CURRENTS (A) HS-1120RH Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) 3.7 3.6 3.5 OUTPUT VOLTAGE (V) 3.4 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 -60 -40 -20 0 +20 +40 +60 +80 +100 +120 TEMPERATURE (oC) 0 100 1K 10K FREQUENCY (Hz) | - VOUT | +VOUT NOISE VOLTAGE (nV/Hz) 30 25 20 15 10 5 300 275 225 200 175 150 125 100 75 ENI eni INIiniINI+ ini+ 100K 50 25 0 NOISE CURRENT (pA/Hz) 250 FIGURE 26. OUTPUT VOLTAGE vs TEMPERATURE (AV = -1, RL = 50) FIGURE 27. INPUT NOISE vs FREQUENCY Test Circuit V+ I CC VIN K1 NC K2 = POSITION 1: VX VIO = 100 VX x100 K2 = POSITION 2: VX -IBIAS = 50K 200pF 100K (0.01%) 10 0.1 K3 0.1 I EE 0.1 NC NC K4 0.1 + 0.1 510 510 7 2 + 10 0.1 0.1 0.1 0.1 100 DUT 1 4 5 50 50 - 470pF 2 510 3+ 510 6 1K VOUT 100 100 K2 1 K5 VZ +IBIAS = 100K VZ + + HA-5177 V- NOTES: All resistors = 1% (), unless otherwise noted All capacitors = 10% (F), unless otherwise noted Chip Components Recommended 9 HS-1120RH Test Circuits and Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V+ VOUT 50 2 50 VOUT RF 50 360 RG 360 2 50 V+ VIN RS 50 VIN RS 50 RF + + - - 510 VV- NOTES: VS = 5V, AV = +1 RS = 50 RL = 100 For Small and Large Signals AV = +1 TEST CIRCUIT NOTES: VS = 5V, AV = +2 RS = 50 RL= 100 For Small and Large Signals AV = +2 TEST CIRCUIT VOUT +2.5V 90% 90% +2.5V VOUT +250mV 90% 90% +250mV +SR -2.5V 10% 10% -SR -2.5V TR , +OS -250mV 10% 10% TF , -OS -250mV LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM Burn-In Circuit HS-1120RH CERDIP R3 Irradiation Circuit HS-1120RH CERDIP R3 R2 R1 D4 VD2 C2 1 2 3 4 8 D3 V+ C1 D1 V- R2 R1 1 2 3 4 C2 8 + 7 6 5 + 7 6 5 C1 V+ NOTES: R1 = R2 = 1k, 5% (Per Socket) R3 = 10k, 5% (Per Socket) C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Minimum D1 = D2 = 1N4002 or Equivalent (Per Board) D3 = D4 = 1N4002 or Equivalent (Per Socket) V+ = +5.5V 0.5V V- = -5.5V 0.5V NOTES: R1 = R2 = 1k, 5% R3 = 10k, 5% C1 = C2 = 0.1F V+ = +5.5V 0.5V V- = -5.5V 0.5V 10 HS-1120RH Die Characteristics DIE DIMENSIONS: 63 mils x 44 mils x 19 mils 1 mil 1600m x 1130m x 483m 25.4m METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA WORST CASE CURRENT DENSITY: 1.6 x 105 A/cm2 TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating Metallization Mask Layout HS-1120RH +IN -IN V- VL BAL BAL VH V+ OUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 11 |
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