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MIC4416
Micrel
MIC4416/4417
IttyBittyTM Low-Side MOSFET Driver
General Description
The MIC4416 and MIC4417 IttyBittyTM low-side MOSFET drivers are designed to switch an N-channel enhancementtype MOSFET from a TTL-compatible control signal in lowside switch applications. The MIC4416 is noninverting and the MIC4417 is inverting. These drivers feature short delays and high peak current to produce precise edges and rapid rise and fall times. Their tiny 4-lead SOT-143 package uses minimum space. The MIC4416/7 is powered from a +4.5V to +18V supply voltage. The on-state gate drive output voltage is approximately equal to the supply voltage (no internal regulators or clamps). High supply voltages, such as 10V, are appropriate for use with standard N-channel MOSFETs. Low supply voltages, such as 5V, are appropriate for use with logic-level N-channel MOSFETs. In a low-side configuration, the driver can control a MOSFET that switches any voltage up to the rating of the MOSFET. The MIC4416 is available in the SOT-143 package and is rated for -40C to +85C ambient temperature range.
Features
* +4.5V to +18V operation * Low steady-state supply current 50A typical, control input low 370A typical, control input high * 1.2A nominal peak output 3.5 typical output resistance at 18V supply 7.8 typical output resistance at 5V supply * 25mV maximum output offset from supply or ground * Operates in low-side switch circuits * TTL-compatible input withstands -20V * ESD protection * Inverting and noninverting versions
Applications
* * * * Battery conservation Solenoid and motion control Lamp control Switch-mode power supplies
Ordering Information
Part Number Noninverting MIC4416BM4 Inverting MIC4417BM4 -40C to +85C SOT-143 D11 -40C to +85C SOT-143 D10 Temp. Range Package Marking
5
Typical Application
* Siliconix 30m, 7A max.
Load Voltage
Load voltage limited only by MOSFET drain-to-source rating
0.1F
3 4 On Off
MIC4416 VS CTL G GND
2 1
Load Si9410DY* N-channel MOSFET
+12V 4.7F
Low-Side Power Switch
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Pin Configuration
G
2
GND
1
Part Identification
3
Part Number MIC4416BM4 MIC4417BM4
Identification D10 D11
Dxx
4
Early production identification: ML10
VS
CTL
SOT-143 (M4)
Pin Description
Pin Number 1 2 3 4 Pin Name GND G VS CTL Pin Function Ground: Power return. Gate (Output) : Gate connection to external MOSFET. Supply (Input): +4.5V to +18V supply. Control (Input): TTL-compatible on/off control input. MIC4416 only: Logic high forces the gate output to the supply voltage. Logic low forces the gate output to ground. MIC4417 only: Logic high forces the gate output to ground. Logic low forces the gate output to the supply voltage.
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Absolute Maximum Ratings
Supply Voltage (VS) .................................................... +20V Control Voltage (VCTL) .................................. -20V to +20V Gate Voltage (VG) ....................................................... +20V Junction Temperature (TJ) ........................................ 150C Lead Temperature, Soldering ................... 260C for 5 sec.
Operating Ratings
Supply Voltage (VS) ....................................... +4.5 to +18V Ambient Temperature Range (TA) ............. -40C to +85C Thermal Resistance (JA)...................................... 220C/W (soldered to 0.25in2 copper ground plane)
Electrical Characteristics
Parameter Supply Current Control Input Voltage Control Input Current Delay Time, VCTL Rising Delay Time, VCTL Falling Output Rise Time Condition (Note 1) 4.5V VS 18V 4.5V VS 18V 0V VCTL VS VS = 5V VS = 18V VS = 5V VS = 18V VS = 5V VS = 18V Output Fall Time VS = 5V VS = 18V Gate Output Offset Voltage Output Resistance 4.5V VS 18V VS = 5V, IOUT = 10mA CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 CL = 1000pF, Note 2 VG = high VG = low P-channel (source) MOSFET N-channel (sink) MOSFET P-channel (source) MOSFET N-channel (sink) MOSFET 250 VCTL = 0V VCTL = 5V VCTL for logic 0 input VCTL for logic 1 input 2.4 -10 42 33 42 23 24 14 28 16 -25 25 7.6 7.8 3.5 3.5 10 10 40 40 40 60 10 Min Typ 50 370 Max 200 1500 0.8 Units A A V V A ns ns ns ns ns ns ns ns mV mV mA
5
VS = 18V, IOUT = 10mA
Gate Output Reverse Current
No latch up
General Note: Devices are ESD protected, however handling precautions are recommended. Note 1: Note 2: Typical values at TA = 25C. Minimum and maximum values indicate performance at -40C TA +85C. Parts production tested at 25C. Refer to "MIC4416 Timing Definitions" and "MIC4417 Timing Definitions" diagrams (see next page).
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Definitions
ISUPPLY VSUPPLY
MIC4416 = high MIC4417 = low 3 4
MIC4416/7 VS CTL G GND
2 1
IOUT VOUT VSUPPLY
ISUPPLY VSUPPLY
MIC4416 = low MIC4417 = high 3 4
MIC4416/7 VS CTL G GND
2 1
IOUT VOUT GND
Source State (P-channel on, N-channel off)
Sink State (P-channel off, N-channel on)
MIC4416/MIC4417 Operating States
INPUT
5V 90% 10% 0V VS 90%
delay time pulse width
2.5V
rise time
delay time
fall time
OUTPUT 10% 0V
MIC4416 (Noninverting) Timing Definitions
INPUT
5V 90% 10% 0V VS 90%
delay time pulse width
2.5V
rise time
delay time
fall time
OUTPUT 10% 0V
MIC4417 (Inverting) Timing Definitions
Test Circuit
VSUPPLY MIC4416/7
3 4 5V 0V
VS CTL
G GND
2 1
CL
VOUT
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Typical Characteristics Note 3
Quiescent Supply Current vs. Supply Voltage
500 SUPPLY CURRENT (A) 400 300 200 100 0 VCTL = 0V 0 3 6 9 12 15 SUPPLY VOLTAGE (V) 18 SUPPLY CURRENT (mA) VCTL = 5V
Supply Current vs. Load Capacitance
100
SUPPLY CURRENT (mA)
Supply Current vs. Load Capacitance
100 1MHz 10 10kHz 1 VSUPPLY = 18V 0.1 1 10 CAPACITANCE (nF) 100 100kHz
1MHz 100kHz 10
10kHz 1
VSUPPLY = 5V 0.1 1 10 CAPACITANCE (nF) 100
Supply Current vs. Frequency
100
Output Rise and Fall Time vs. Load Capacitance
100 10 VSUPPLY = 5V fCTL = 50kHz FALL TIME (s) RISE 1
Output Rise and Fall Time vs. Load Capacitance
VSUPPLY = 18V fCTL = 50kHz
SUPPLY CURRENT (mA)
VSUPPLY = 18V 10
10 TIME (s)
1
FALL 0.1 RISE
1
5V
0.1
0.1
10
1000
2000
100
0.01
1
FREQUENCY (kHz)
10 CAPACITANCE (nF)
100
0.01
1
10 CAPACITANCE (nF)
100
5
Delay Time vs. Supply Voltage
60 50 TIME (ns) TIME (ns) 40 VCTL RISE 30 20 VCTL FALL 10 0 0 3 6 9 12 15 SUPPLY VOLTAGE (V) 18 10 60 50
Delay Time vs. Temperature
60 VCTL FALL 50 VCTL RISE TIME (ns) 40 30 20
Delay Time vs. Temperature
40 30 20
VCTL RISE
VCTL FALL 10 VSUPPLY = 18V 0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C) VSUPPLY = 5V 0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
Rise and Fall Time vs. Supply Voltage
50 fCTL = 1MHz 40 TIME (ns) TIME (ns) 30 20 10 0 FALL RISE 40 30 20 10 50
Rise and Fall Time vs. Temperature
50 40 FALL RISE VSUPPLY = 5V fCTL = 1MHz TIME (ns) 30 20 10
Rise and Fall Time vs. Temperature
VSUPPLY = 18V fCTL = 1MHz
FALL RISE
0
3 6 9 12 15 SUPPLY VOLTAGE (V)
18
0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
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Output Voltage Drop vs. Output Source Current
1200 VOLTAGE DROP (mV) VOLTAGE DROP (mV) 1000 800 VSUPPLY = 5V 600 400 200 0 0 20 40 60 80 100 OUTPUT CURRENT (mA) 18V NOTE 4
Output Voltage Drop vs. Output Sink Current
1200 NOTE 5 1000 800 VSUPPLY = 5V 600 400 200 0 0 20 40 60 80 100 OUTPUT CURRENT (mA) 18V
HYSTERESIS (mV)
Control Input Hysteresis vs. Supply Voltage
600 500 400 300 200 100 0 0 3 6 9 12 15 SUPPLY VOLTAGE (V) 18
Output Source Resistance
10 ON RESISTANCE () 8 6 4 IOUT = 10mA 2 0 ON RESISTANCE () 10 8 6 4
Output Sink Resistance
800
Control Input Hysteresis vs. Temperature
HYSTERESIS (mV)
600
VSUPPLY = 18V
400
5V
IOUT = 10mA 2 0
200
0
3 6 9 12 15 SUPPLY VOLTAGE (V)
18
0
3 6 9 12 15 SUPPLY VOLTAGE (V)
18
0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
Output Source Resistance vs. Temperature
14 ON-RESISTANCE () ON-RESISTANCE () 12 10 8 6 4 2 VSUPPLY = 18V IOUT 3mA VSUPPLY = 5V IOUT 3mA 14 12 10 8 6 4 2
Output Sink Resistance vs. Temperature
VSUPPLY = 5V IOUT 3mA
2.5 2.0 CURRENT (A) 1.5 1.0 0.5 0
Peak Output Current vs. Supply Voltage
Source NOTE 6
VSUPPLY = 18V IOUT 3mA
Sink NOTE 7 0 3 6 9 12 15 SUPPLY VOLTAGE (V) 18
0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
0 -60 -30 0 30 60 90 120 150 TEMPERATURE (C)
Note 3:
Supply Current vs. Frequency
SUPPLY CURRENT (mA) VSUPPLY = 5V CL = 10,000pF 10 5,000pF 2,000pF 1,000pF 1 0pF
100
100
Supply Current vs. Frequency
VSUPPLY = 18V CL = 10,000pF
Typical Characteristics at TA = 25C, VS = 5V, CL = 1000pF unless noted. Source-to-drain voltage drop across the internal P-channel MOSFET = VS - VG. Drain-to-source voltage drop across the internal N-channel MOSFET = VG - VGND. (Voltage applied to G.) 1s pulse test, 50% duty cycle. OUT connected to GND. OUT sources current. (MIC4416, VCTL = 5V; MIC4417, VCTL = 0V) 1s pulse test, 50% duty cycle. VS connected to OUT. OUT sinks current. (MIC4416, VCTL = 0V; MIC4417, VCTL = 5V)
Note 4:
SUPPLY CURRENT (mA)
Note 5:
10
5,000pF 2,000pF 1,000pF
Note 6:
1
0pF
0.1 1x102 1x103 1x104 1x105 1x106 1x107 FREQUENCY (Hz)
0.1 1x102 1x103 1x104 1x105 1x106 1x107 FREQUENCY (Hz)
Note 7:
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MIC4416
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Functional Diagram
VSUPPLY
VSWITCHED VS
0.3mA D1 CTL
Logic-Level Input
D4 R1 2k Q1 D2 D3 35V D5
Q2
MIC4417 INVERTING Q3 G
MIC4416 NONINVERTING
Q4 GND
Functional Diagram with External Components
Load
0.6mA
5
Functional Description
Refer to the functional diagram. The MIC4416 is a noninverting driver. A logic high on the CTL (control) input produces gate drive output. The MIC4417 is an inverting driver. A logic low on the CTL (control) input produces gate drive output. The G (gate) output is used to turn on an external N-channel MOSFET. Supply VS (supply) is rated for +4.5V to +18V. External capacitors are recommended to decouple noise. Control CTL (control) is a TTL-compatible input. CTL must be forced high or low by an external signal. A floating input will cause unpredictable operation. A high input turns on Q1, which sinks the output of the 0.3mA and the 0.6mA current source, forcing the input of the first inverter low. Hysteresis The control threshold voltage, when CTL is rising, is slightly higher than the control threshold voltage when CTL is falling. When CTL is low, Q2 is on, which applies the additional 0.6mA current source to Q1. Forcing CTL high turns on Q1 which must sink 0.9mA from the two current sources. The higher current through Q1 causes a larger drain-to-source voltage drop across Q1. A slightly higher control voltage is required to pull the input of the first inverter down to its threshold. April 1998 Q2 turns off after the first inverter output goes high. This reduces the current through Q1 to 0.3mA. The lower current reduces the drain-to-source voltage drop across Q1. A slightly lower control voltage will pull the input of the first inverter up to its threshold. Drivers The second (optional) inverter permits the driver to be manufactured in inverting and noninverting versions. The last inverter functions as a driver for the output MOSFETs Q3 and Q4. Gate Output G (gate) is designed to drive a capacitive load. VG (gate output voltage) is either approximately the supply voltage or approximately ground, depending on the logic state applied to CTL. If CTL is high, and VS (supply) drops to zero, the gate output will be floating (unpredictable). ESD Protection D1 protects VS from negative ESD voltages. D2 and D3 clamp positive and negative ESD voltages applied to CTL. R1 isolates the gate of Q1 from sudden changes on the CTL input. D4 and D5 prevent Q1's gate voltage from exceeding the supply voltage or going below ground.
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+15V
Application Information
The MIC4416/7 is designed to provide high peak current for charging and discharging capacitive loads. The 1.2A peak value is a nominal value determined under specific conditions. This nominal value is used to compare its relative size to other low-side MOSFET drivers. The MIC4416/7 is not designed to directly switch 1.2A continuous loads. Supply Bypass Capacitors from VS to GND are recommended to control switching and supply transients. Load current and supply lead length are some of the factors that affect capacitor size requirements. A 4.7F or 10F tantalum capacitor is suitable for many applications. Low-ESR (equivalent series resistance) metalized film capacitors may also be suitable. An additional 0.1F ceramic capacitor is suggested in parallel with the larger capacitor to control high-frequency transients. The low ESR (equivalent series resistance) of tantalum capacitors makes them especially effective, but also makes them susceptible to uncontrolled inrush current from low impedance voltage sources (such as NiCd batteries or automatic test equipment). Avoid instantaneously applying voltage, capable of very high peak current, directly to or near tantalum capacitors without additional current limiting. Normal power supply turn-on (slow rise time) or printed circuit trace resistance is usually adequate for normal product usage. Circuit Layout Avoid long power supply and ground traces. They exhibit inductance that can cause voltage transients (inductive kick). Even with resistive loads, inductive transients can sometimes exceed the ratings of the MOSFET and the driver. When a load is switched off, supply lead inductance forces current to continue flowing--resulting in a positive voltage spike. Inductance in the ground (return) lead to the supply has similar effects, except the voltage spike is negative. Switching transitions momentarily draw current from VS to GND. This combines with supply lead inductance to create voltage transients at turn on and turnoff. Transients can also result in slower apparent rise or fall times when driver's ground shifts with respect to the control input. Minimize the length of supply and ground traces or use ground and power planes when possible. Bypass capacitors should be placed as close as practical to the driver. MOSFET Selection
* Gate enhancement voltage
+8V to +18V 4.7F 0.1F
3 4
Try a 15, 15W or 1k, 1/4W resistor
Standard MOSFET IRFZ24
MIC4416 VS CTL G GND
2 1
Logic Input
VGS*
International Rectifier 100m, 60V MOSFET
Figure 1. Using a Standard MOSFET
Logic-Level MOSFET Logic-level N-channel power MOSFETs are fully enhanced with a gate-to-source voltage of approximately 5V and have an absolute maximum gate-to-source voltage of 10V. They are less common and generally more expensive. The MIC4416/7 can drive a logic-level MOSFET if the supply voltage, including transients, does not exceed the maximum MOSFET gate-to-source rating (10V).
+5V
* Gate enhancement voltage (must not exceed 10V)
+4.5V to 10V* 4.7F 0.1F
3 4
Load
Load
G GND
2 1
Try a 3, 10W or 100, 1/4W resistor
Logic-Level MOSFET IRLZ44
MIC4416 VS CTL
Logic Input
VGS*
International Rectifier 28m, 60V MOSFET
Figure 2. Using a Logic-Level MOSFET At low voltages, the MIC4416/7's internal P- and N-channel MOSFET's on-resistance will increase and slow the output rise time. Refer to "Typical Characteristics" graphs. Inductive Loads
VSWITCHED
VSUPPLY 4.7F 0.1F
3 4 On Off
Schottky Diode MIC4416 VS CTL G GND
2 1
Standard MOSFET A standard N-channel power MOSFET is fully enhanced with a gate-to-source voltage of approximately 10V and has an absolute maximum gate-to-source voltage of 20V. The MIC4416/7's on-state output is approximately equal to the supply voltage. The lowest usable voltage depends upon the behavior of the MOSFET.
Figure 3. Switching an Inductive Load Switching off an inductive load in a low-side application forces the MOSFET drain higher than the supply voltage (as the inductor resists changes to current). To prevent exceeding the MOSFET's drain-to-gate and drain-to-source ratings, a Schottky diode should be connected across the inductive load.
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MIC4416
Power Dissipation The maximum power dissipation must not be exceeded to prevent die meltdown or deterioration. Power dissipation in on/off switch applications is negligible. Fast repetitive switching applications, such as SMPS (switchmode power supplies), cause a significant increase in power dissipation with frequency. Power is dissipated each time current passes through the internal output MOSFETs when charging or discharging the external MOSFET. Power is also dissipated during each transition when some current momentarily passes from VS to GND through both internal MOSFETs. Power dissipation is the product of supply voltage and supply current: 1) PD = VS x IS where: PD = power dissipation (W) VS = supply voltage (V) IS = supply current (A) [see paragraph below] Supply current is a function of supply voltage, switching frequency, and load capacitance. Determine this value from the "Typical Characteristics: Supply Current vs. Frequency" graph or measure it in the actual application. Do not allow PD to exceed PD (max), below. TJ (junction temperature) is the sum of TA (ambient temperature) and the temperature rise across the thermal resistance of the package. In another form: 2)
Micrel
High-Frequency Operation Although the MIC4416/7 driver will operate at frequencies greater than 1MHz, the MOSFET's capacitance and the load will affect the output waveform (at the MOSFET's drain). For example, an MIC4416/IRL3103 test circuit using a 47 5W load resistor will produce an output waveform that closely matches the input signal shape up to about 500kHz. The same test circuit with a 1k load resistor operates only up to about 25kHz before the MOSFET source waveform shows significant change.
Slower rise time observed at MOSFET's drain
+5V
+4.5V to 18V 4.7F 0.1F
3 4
Compare 47k, 5W to 1k, 1/4W loads
D G S
MIC4416 VS CTL G GND
2 1
Logic-Level MOSFET IRL3103*
Logic Input
* International Rectifier 14m, 30V MOSFET, logic-level, VGS = 20V max.
Figure 5. MOSFET Capacitance Effects at High Switching Frequency When the MOSFET is driven off, the slower rise occurs because the MOSFET's output capacitance recharges through the load resistance (RC circuit). A lower load resistance allows the output to rise faster. For the fastest driver operation, choose the smallest power MOSFET that will safely handle the desired voltage, current, and safety margin. The smallest MOSFETs generally have the lowest capacitance.
5
PD
150 - TA 220
where: PD (max) = maximum power dissipation (W) 150 = absolute maximum junction temperature (C) TA = ambient temperature (C) [68F = 20C] 220 = package thermal resistance (C/W) Maximum power dissipation at 20C with the driver soldered to a 0.25in2 ground plane is approximately 600mW.
G
PCB heat sink/ ground plane
GND
VS
CTL PCB traces
Figure 4. Heat-Sink Plane The SOT-143 package JA (junction-to-ambient thermal resistance) can be improved by using a heat sink larger than the specified 0.25in2 ground plane. Significant heat transfer occurs through the large (GND) lead. This lead is an extension of the paddle to which the die is attached. April 1998 5-31

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