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PIN Diodes
MA3Z551
Silicon epitaxial planar type
Unit : mm
For high-frequency variable resistor attenuator
2.1 0.1 0.425 1.25 0.1 0.425
* Small diode capacitance CD * Large variable range of forward dynamic resistance rf * Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
0.65
2.0 0.2
1.3 0.1
1
0.65
3
2
0.2
0.9 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 -25 to +85 -55 to +150 Unit V V mA mW C C
0.7 0.1
0 to 0.1
0.2 0.1
1 : Anode 2 : NC 3 : Cathode EIAJ SC-70 S-Mini Type Package (3-pin)
Marking Symbol: MY Internal Connection
1 3 2
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 A, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF k
Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 - 0.05
+ 0.1
0.3 - 0
+ 0.1
I Features
1
MA3Z551
IF V F
25C
PIN Diodes
CD VR
f = 1 MHz Ta = 25C
120
10
IR Ta
1 000 VR = 40 V
100
5
Diode capacitance CD (pF)
Forward current IF (mA)
100
80
Ta = 60C
3 2
Reverse current IR (nA)
0 4 8 12 16 20 24 28 32 36 40
10
60
1
1
40
0.5 0.3 0.2
20 - 40C 0 0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
0.1
0.01
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
2

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