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| Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2025 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 Product Summary Part Number SSD2025 BVDSS 60V RDS(on) 0.10 ID 3.3A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25 Continuous Drain Current TA=70 Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25 ) ( TA=70 ) Operating and Junction Storage Temperature Range Value 60 3.3 2.6 10.0 20 2.0 1.3 - 55 to +150 W A V Units V A Thermal Resistance Symbol RJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units /W Rev. A1 SSD2025 Electrical Characteristics (TC=25 unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gFS td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Min. Typ. Max. Units 60 1.0 ----10 ---------100 -100 1.0 25 -A S V V nA nA A Dual N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250A VDS= 5V ,ID=250A VGS=20V VGS=-20V VDS=48V VDS=48V,TC=55 VDS=5V ,VGS=10V VGS=10V,ID=3.3A VGS=4.5V,ID=2.5A VDS =15V,ID=3.3A VDD=30V,ID=1.0A, R0=6.0, -- 0.065 0.1 -- 0.084 0.2 --------7.0 16 18 40 23 18 2.3 4.7 -25 30 50 40 30 --- ns nC VDS=30V,VGS=10V, ID=3.3A Source-Drain Diode Ratings and Characteristics Symbol IS VSD trr Characteristic Continuous Source Current (Body Diode) Diode Forward Voltage -----70 1.7 1.2 100 A V ns Min. Typ. Max. Units Test Condition Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier G D S TA=25,IS=1.7A,VGS=0V TA=25,IF=1.7A,diF/dt=100A/s Reverse Recovery Time Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature Dual N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 1 0 Vs 1,,,,,,V g= 0987654 8 8 10 SSD2025 Fig 2. Transfer Characteristics ID , Drain Current [A] 6 ID , Drain Current [A] 6 -55 oC 25 oC 4 4 Vs 3 g= V 2 150 oC 2 0 0 2 4 6 8 1 0 0 0 1 2 3 4 5 6 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 01 .4 11 0 Fig 4. Source-Drain Forward Voltage RDS(on) , [ ] Drain-Source On-Resistance 01 .2 01 .0 V =. V GS 4 5 00 .8 IDR , Reverse Drain Current [A] 10 0 1 0 oC 5 2 oC 5 1 -1 0 00 .6 V =1 V 0 GS 00 .4 00 .2 0 2 4 6 8 1 0 00 . 04 . 08 . 12 . 16 . 20 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 80 0 1 0 Fig 6. Gate Charge vs. Gate-Source Voltage Capacitance [pF] 60 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H C iss VGS , Gate-Source Voltage [V] 8 6 40 0 4 V =3V 0 DS I=33 .A D 20 0 C oss C rss 2 0 0 5 1 0 1 5 2 0 2 5 3 0 0 4 8 1 2 1 6 2 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SSD2025 Fig 7. Breakdown Voltage vs. Temperature 12 . 20 . Dual N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 11 . 16 . 12 . V =1 V 0 GS I =33A . D 08 . 10 . I = 2 0 A 5 D 09 . 04 . 08 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient 100 Thermal Response Duty Cycle=0.5 0.2 PDM 10- 1 0.1 0.05 0.02 Single Pulse 10- 3 10- 2 10- 1 100 t1 t2 @ Notes : 1. Z J C (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) 4. Surface Mounted 10- 2 - 4 10 101 t1 , Square Wave Pulse Duration [sec] TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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