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| Silicon Junction FETs (Small Signal) 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.10.1 s Features q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 0.425 1.250.1 0.425 1 2.00.2 1.30.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25C) 0.2 Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 -30 20 10 150 125 -55 to +125 Unit V V mA mA mW C C 1: Source 2: Drain 3: Gate 0.90.1 0.70.1 0 to 0.1 0.20.1 EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol (Example): 1O s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS IGSS VGSC gm * Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 0.5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 30V, ID = 1mA, GV = 80dB Rg = 100k, Function = FLAT min 0.5 - 0.1 4 4 typ max 12 -100 -1.5 0.15-0.05 +0.1 0.3-0 +0.1 Unit mA nA V mS Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV 14 3.5 60 pF pF mV * IDSS rank classification Runk IDSS (mA) P 0.5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR Marking Symbol 1 Silicon Junction FETs (Small Signal) PD Ta 240 8 Ta=25C 7 200 8.0 2SK662 ID VDS 9.6 VDS=10V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 VGS=0V 5 4 - 0.1V 3 2 1 - 0.2V - 0.3V - 0.4V Drain current ID (mA) 6 6.4 120 4.8 80 3.2 Ta=75C 1.6 25C -25C 40 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) gm VGS 20 VDS=10V Ta=25C 20 g m ID 10 Ciss, Coss VDS Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) VDS=10V Ta=25C VGS=-3V f=1MHz Ta=25C 8 Mutual conductance gm (mS) 16 Mutual conductance gm (mS) IDSS=5mA 16 12 12 2mA 8 6 Ciss 8 IDSS=5mA 4 4 2mA 0 - 0.8 4 2 Coss 0 - 0.6 - 0.4 - 0.2 0 0 1 2 3 4 5 6 7 8 0 1 3 10 30 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) Crss VDS Reverse transfer capacitance (Common source) Crss (pF) 5 VGS=3V f=1MHz Ta=25C 4 12 NF f VDS=10V ID=5.2mA Ta=25C 10 Noise figure NF (dB) 8 3 6 Rg=500 2 4 1 2 1k 0 1 3 10 30 100 0 10 102 103 104 105 Drain to source voltage VDS (V) Frequency f (Hz) 2 |
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