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| Ordering number : ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features * * * Package Dimensions unit : mm 2083B [2SJ597] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 0.6 5.5 7.0 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ597] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2801 No.6670-1/4 2SJ597 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --4 --16 1 15 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-2A ID=--2A, VGS=--10V ID=--1A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 --1.0 2.3 3.2 300 400 270 70 20 8 11 28 13 9.8 1.4 1.7 --0.92 --1.2 400 560 Ratings min --60 --10 10 --2.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10s D.C.1% VDD= --30V ID= --2A RL=15 D VOUT G P.G 50 2SJ597 S --4.5 --4.0 ID -- VDS V 0.0 . --4 0V Drain Current, ID -- A --8 ID -- VGS VDS= --10V =-25 C Tc --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --7 --6 --5 --4 --3 --2 --1 0 --1.0 --1 0V --8 .0V Drain Current, ID -- A -- --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --3.0V VGS= --2.5V 75 C --4.5 --3.0 --6 . --3.5V 25 --5.0 IT02077 --3.5 0 5. V Drain-to-Source-Voltage, VDS -- V IT02076 Gate-to-Source Voltage, VGS -- V No.6670-2/4 C 2SJ597 1000 RDS(on) -- VGS Tc=25C 800 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 700 600 500 400 300 200 100 0 --60 --1A ID= --2A 4V = -V GS , 10V --1A = -I D= VGS , --2A I D= --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.001 2 3 yfs -- ID IT02078 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Case Temperature Tc -- C IT02079 IF -- VSD VGS= 0 Forward Transfer Admittance, yfs -- S VDS= --10V Foward Current, IF -- A 75 C 25C = Tc 5 --2 C 75 25 C 5 7--0.1 23 5 7--1.0 23 5 7 --10 IT02080 57 --0.01 2 3 --0.01 --0.4 --0.6 Tc= C --25 C --0.8 --1.0 --1.2 IT02081 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A Diode Forward Voltage, VSD -- V --10 --9 VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --4A --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 3 2 Coss Crss 0 --10 --20 --30 --40 --50 --60 IT01230 10 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V 100 7 SW Time -- ID Drain Current, ID -- A --100 7 5 3 2 IT02083 ASO Switching Time, SW Time -- ns 5 VDD= --30V VGS= --10V td(off) Drain Current, ID -- A 3 2 IDP= --16A ID= --4A 1m 10m s s 100 ms <10s 10 0 s tf td(on) tr --10 7 5 3 2 --1.0 7 5 3 2 10 7 5 3 2 1.0 --0.1 ope rat Operation in this ion area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 --10 2 3 5 7 --100 DC 2 3 5 7 --1.0 2 3 5 7 --10 --0.1 --1.0 Drain Current, ID -- A IT02084 Drain-to-Source Voltage, VDS -- V IT02085 No.6670-3/4 2SJ597 1.2 PD -- Ta Allowable Power Dissipation, PD -- W 20 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 15 0.8 0.6 10 0.4 5 0.2 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02086 Case Temperature, Tc -- C IT02087 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6670-4/4 |
Price & Availability of 2SJ597
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