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| 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B (Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ575 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -30 20 -100 -400 -100 400 150 -55 to +150 Unit V V mA mA mA mW C C 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 20 -- -- -1.3 -- -- 68 -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.8 5.7 105 25 20 8 10 15 40 45 Max -- -- 5 -1 -2.3 3.3 7.9 -- -- -- -- -- -- -- -- Unit V V A A V mS pF pF pF ns ns ns ns Test Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -50 mA,VGS = -10 V Note 3 ID = -50 mA,VGS = -4 V Note 3 ID = -50 mA, V DS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = -10 V VGS = 0 f = 1 MHz I D = -50mA, VGS = -10 V RL = 200 Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is AP t d(on) tr t d(off) tf 2 2SJ575 Main Characteristics Power vs. Temperature Derating 800 *Pch (mW) -5 -2 -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Operation in this area is limited by RDS(on) Mavimum Safe Operation Area 600 I D (A) Channel Dissipation 400 Drain Current DC = (1 10 m sh s Op ot er ) at ion PW 10 s 100 s 1 ms 200 0 50 100 150 200 Ambient Temperature Ta ( C) -0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2 Ta=25 C -5 -10 -20 -50 Drain to Source Voltage VDS (V) *Value on the alumina ceramic boad (12.5x20x0.7mm) Value on the alumina ceramic boad (12.5x20x0.7mm) -0.5 Typical Output Characteristics -7 V -6 V Pulse Test I D (A) Typical Transfer Characteristics -0.5 25 C 75 C -0.3 Tc = -25 C I D (A) -0.4 -5V -0.4 Drain Current -0.2 -4 V Drain Current -0.3 -0.2 -0.1 VGS = -3 V 0 -2 -4 -6 -8 VDS (V) -10 -0.1 V DS = -10 V Pulse Test 0 -2 -4 -6 Gate to Source Voltage -8 -10 VGS (V) Drain to Source Voltage 3 2SJ575 Drain to Source Saturation Voltage vs. Gate to Source Voltage -1.0 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 VGS = -4 V 5 -10V Pulse Test -0.8 -0.6 I D = -100mA -0.4 2 -0.2 -50m A -10m A 1.0 0.5 -0.01 0 -6 -2 -4 Gate to Source Voltage -8 VGS (V) -10 -0.02 Drain Current -0.05 I D (A) -0.1 Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 10 I D = -10m A, -50m A 8 -100m A VGS = -4 V 6 -10m A, -50m A, -100m A 4 -10 V 0.5 0.2 0.1 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C 0.05 0.02 0.01 75 C 2 Pulse Test 0 -40 0 40 80 Tc 120 ( C) 160 0.005 -0.01 -0.02 -0.05 -0.1 Case Temperature Drain Current I D (A) 4 2SJ575 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Switching Time t (ns) 100 Capacitance C (pF) 50 1000 500 200 100 50 tf Switching Characteristics 20 10 5 Ciss Coss t d(off) 20 10 5 2 tr t d(on) Crss 2 1 0 -10 -20 -30 -40 -50 Drain to Source Voltage VDS (V) 1 -0.01 V GS = -4 V, VDD = -10 V PW = 5 s, duty < 1 % -0.02 -0.05 I D (A) -0.1 Drain Current Reverse Drain Current vs. Source to Drain Voltage -0.5 Reverse Drain Current I DR (A) -0.4 V GS = 0,5 V -5 V -0.3 -0.2 -10 V -0.1 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) 5 2SJ575 Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin -10 V 50 V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveforms 6 2SJ575 Package Dimensions Unit: mm 0.65 - 0.3 + 0.1 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 2.8 - 0.6 + 0.2 1.9 2.95 - 0.2 + 0.2 0.3 0.65 - 0.3 + 0.1 0.45 0.95 0.45 0.95 1.5 0 ~ 0.1 1.1- 0.1 + 0.2 MPAK Hitachi Code SC-59 EIAJ TO-236Mod. JEDEC 7 2SJ575 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 8 |
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