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| Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.00.2 4.20.2 Unit: mm 5.00.1 10.00.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25C) Ratings -60 -80 -60 -80 -5 -4 -2 15 2.0 150 -55 to +150 Unit V 90 2.50.2 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 emitter voltage 2SB1418A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 2.50.2 2.50.2 V A A W C C B 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1418 2SB1418A 2SB1418 2SB1418A 2SB1418 2SB1418A (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton toff Conditions VCB = -60V, IB = 0 VCB = -80V, IB = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A VCE = -4V, IC = -2A IC = -2A, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2A, IB1 = -8mA, IB2 = 8mA, VCC = -50V 20 0.2 2 -60 -80 1000 2000 10000 -2.8 -2.5 V V MHz s s min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time *h FE2 Rank classification Q P Rank hFE2 2000 to 5000 4000 to 10000 1 Power Transistors PC -- Ta 20 -6 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25C -5 2SB1418, 2SB1418A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=250 -30 -10 TC=100C -3 -1 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) -4 (1) 10 -1.6mA -1.8mA -1.4mA -1.2mA IB=-2.0mA -1.0mA - 0.8mA - 0.6mA - 0.4mA -3 -2 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 5 -1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 - 0.2mA -10 -12 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) IC -- VBE -6 VCE=-4V 100000 hFE -- IC 1000 Cob -- VCB Collector output capacitance Cob (pF) VCE=-4V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE -5 30000 TC=100C 25C 300 Collector current IC (A) 10000 -4 TC=100C -3 25C 100 3000 -25C 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 30 -2 10 -1 -25C 3 0 0 -1 -2 -3 -4 -1 -3 -10 1 -1 -3 -10 -30 -100 Base to emitter voltage VBE (V) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C 10000 Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink -10 ICP -3 -1 IC 10ms DC t=1ms Thermal resistance Rth(t) (C/W) Collector current IC (A) 1000 100 (1) (2) - 0.3 - 0.1 - 0.03 - 0.01 -1 10 2SB1418A 2SB1418 1 -3 -10 -30 -100 -300 -1000 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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