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| TOPLED(R) RG LS T770, LO T770, LY T770 LG T770, LP T770 Besondere Merkmale q q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839 VPL06899 Features q q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 LS T770, LO T770, LY T770 LG T770, LP T770 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA IV (mcd) 2.5 ... 4.0 ... 6.3 ... 4.0 ... 2.5 ... 4.0 ... 6.3 ... 4.0 ... 2.5 ... 4.0 ... 6.3 ... 10.0 ... 4.0 ... 2.5 ... 4.0 ... 6.3 ... 10.0 ... 4.0 ... 1.0 ... 1.6 ... 2.5 ... 1.6 ... 12.5 8.0 12.5 20.0 12.5 8.0 12.5 20.0 20.0 8.0 12.5 20.0 32.0 20.0 8.0 12.5 20.0 32.0 8.0 3.2 5.0 12.5 Luminous Flux IF = 10 mA V (mlm) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 8 (typ.) 12 (typ.) - Ordering Code LS T770-HK LS T770-J LS T770-K LS T770-JL LO T770-HK LO T770-J LO T770-K LO T770-JL LY T770-HL LY T770-J LY T770-K LY T770-L LY T770-JM LG T770-HL LG T770-J LG T770-K LG T770-L LG T770-JM LP T770-FJ LP T770-G LP T770-H LP T770-GK super-red Q62703-Q2726 Q62703-Q2727 Q62703-Q2728 Q62703-Q2729 Q62703-Q2730 Q62703-Q2731 Q62703-Q2732 Q62703-Q2733 Q62703-Q2734 Q62703-Q2736 Q62703-Q3241 Q62703-Q3906 Q62703-Q2737 Q62703-Q2738 Q62703-Q2739 Q62703-Q2740 Q62703-Q3100 Q62703-Q2741 Q62703-Q2742 Q62703-Q2743 Q62703-Q2744 Q62703-Q2745 orange colorless clear yellow colorless clear green colorless clear pure green colorless clear Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 2 LS T770, LO T770, LY T770 LG T770, LP T770 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe je 16 mm2) mounted on PC board*) (pad size 16 mm2 each) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5 100 400 V mW K/W Semiconductor Group 3 LS T770, LO T770, LY T770 LG T770, LP T770 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit peak dom 628 605 590 570 560 nm 45 40 45 25 22 nm 2 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 Grad deg. V V VF VF IR IR C0 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 LS T770, LO T770, LY T770 LG T770, LP T770 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS T770, LO T770, LY T770 LG T770, LP T770 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 6 LS T770, LO T770, LY T770 LG T770, LP T770 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 7 LS T770, LO T770, LY T770 LG T770, LP T770 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: Cathode mark: abgeschragte Ecke bevelled edge Semiconductor Group 8 GPL06899 |
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