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PD - 91385B
IRF5305
HEXFET(R) Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -55V RDS(on) = 0.06
G
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
-31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.4 --- 62
Units
C/W
3/3/00
IRF5305
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.034 --- --- --- --- --- --- --- --- --- --- 14 66 39 63 4.5 7.5 1200 520 250
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -16A -4.0 V VDS = V GS, ID = -250A --- S VDS = -25V, ID = -16A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = -16A 13 nC VDS = -44V 29 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 71 170 -31 A -110 -1.3 110 250 V ns nC
Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD -16A, di/dt -280A/s, VDD V(BR)DSS,
TJ 175C
VDD = -25V, starting TJ = 25C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRF5305
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P
1000
-ID , D rain-to-S ou rc e C urre nt (A )
-ID , D rain-to-S ourc e C urrent (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
100
10
10
-4.5 V 2 0 s P U LS E W ID TH T c = 2 5C J A
0.1 1 10 100
-4 .5 V 20 s P U L S E W ID T H TC = 17 5C J
0.1 1 10
1
1
A
100
-VD S , D rain-to-S ourc e V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 2 5C TJ = 17 5 C
R D S (on) , Drain-to-S ource O n Resistance (N orm alized)
I D = -27 A
-I D , D rain-to -So urc e C urre nt (A )
1.5
10
1.0
0.5
1 4 5 6 7
V DS = -2 5 V 2 0 s P U L S E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = -10 V
100 120 140 160 180
A
-V G S , G ate -to-Source Volta ge (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF5305
2500
2000
C iss C oss
1500
1000
-V G S , G ate -to-S ou rc e V oltage (V )
V GS C iss C rs s C o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
20
I D = -1 6A V D S = -4 4V V D S = -2 8V
16
C, C apacitanc e (pF )
12
8
C rss
500
4
0 1 10 100
A
0 0 10 20 30
FO R TE S T C IR C U IT S E E FIG U R E 1 3
40 50 60
A
-V D S , D rain-to-S ourc e V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-IS D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
-ID , D rain C urrent (A )
100
100
100 s
TJ = 17 5 C TJ = 25 C
10 1m s
10 0.4 0.8 1.2 1.6
V G S = 0V
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
10m s
2.0
100
A
-VS D , S ourc e-to-D rain V oltage (V )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5305
VDS
35
RD
VGS
30
D.U.T.
+
-ID , Drain Current (A)
25
-10V
20
Pulse Width 1 s Duty Factor 0.1 %
15
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
10
VGS
5
10%
0 25 50 75 100 125 150 175
90% VDS
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2
0.1
0.05 0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
RG
VDD
5
IRF5305
VDS L 700
E A S , S ingle Pulse Avalanc he E nergy (m J)
RG
D .U .T IA S D R IV E R
0 .0 1
TO P
600
VD D A
BOTTOM
500
ID -6.6 A -11 A -1 6A
-2 0 V
tp
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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+
D.U.T.
-
+ -
400
300
200
100
0
V D D = -2 5V
25 50 75 100 125 150
A
175
S tarting T J , J unc tion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
50K 12V .2F .3F
VDS
IRF5305
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
VDD
*
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
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7
IRF5305
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M
A
IN TE R N A T IO N A L R E C TIFIE R LOGO ASSEMBLY L OT C O D E
PART NU MBER IR F 1 0 10 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
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8
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