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| Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 50 40 5 3 1.5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC-71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE *1 Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = IC = 2A, IB = 1A*2 IC = 1.5A, IB = 0.15A*2 0.2A*2 VCB = 5V, IE = -0.5A*2, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 1 100 10 4.10.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit A A A V V 50 40 80 120 220 1 1.5 150 45 *2 VCE(sat) VBE(sat) fT Cob V V MHz pF Pulse measurement *1h FE Rank classification Q 80 ~ 160 R 120 ~ 220 Rank hFE 1 Transistor PC -- Ta 1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5 IB=40mA 2SD1051 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) Ta=25C 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (A) 3.0 2.5 2.0 1.5 35mA 30mA 25mA 20mA 15mA 10mA 0.8 0.6 0.4 1.0 0.5 5mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 300 VCE=5V 240 fT -- I E VCB=5V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Transition frequency fT (MHz) 1 3 10 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 200 200 Ta=75C 150 25C -25C 100 160 120 80 50 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob -- VCB 120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C 60 Ta=25C 50 300 1000 ICBO -- Ta VCB=20V Collector output capacitance Cob (pF) 100 80 40 ICBO (Ta) ICBO (Ta=25C) 0.01 0.1 1 10 100 60 30 30 40 20 10 20 10 3 0 1 3 10 30 100 0 0.001 1 0 20 40 60 80 100 Collector to base voltage VCB (V) Base to emitter resistance RBE (k) Ambient temperature Ta (C) 2 |
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