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| Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.8 -0.3 +0.2 s Features q q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 +0.2 1.1 -0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 50 40 15 100 50 200 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1Z s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 max 100 1 0.16 -0.06 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 +0.1 1.45 Unit nA A V V V 50 40 15 400 1000 0.05 120 2000 0.2 VCE(sat) V MHz *h FE Rank classification Rank hFE Marking Symbol R 400 ~ 800 1ZR S 600 ~ 1200 1ZS T 1000 ~ 2000 1ZT 1 Transistor PC -- Ta 240 160 Ta=25C 140 200 100 25C Ta=75C 80 -25C 2SD1030 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100A 90A 80A 70A 60A 50A 40A 30A 20A 10A 160 120 Collector current IC (mA) 60 80 40 40 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C -25C IC/IB=10 1800 hFE -- IC 250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 200 1200 Ta=75C 900 25C -25C 600 150 100 300 50 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 8 Collector output capacitance Cob (pF) 7 6 5 4 3 2 1 0 1 3 10 IE=0 f=1MHz Ta=25C 30 100 Collector to base voltage VCB (V) 2 |
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