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Power Transistors
2SB938, 2SB938A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1261 and 2SD1261A
10.00.3
8.50.2 6.00.5
3.40.3
Unit: mm
1.00.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings -60 -80 -60 -80 -5 -8 -4 40 1.3 150 -55 to +150 Unit V
1.50.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.80.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB938 2SB938A 2SB938 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.540.3 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2
emitter voltage 2SB938A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
10.00.3
6.00.3
V A A W
1.5-0.4
2.0
3.0-0.2
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
C
1 2 3
C
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB938 2SB938A 2SB938 2SB938A 2SB938 2SB938A
(TC=25C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf IC = -3A, IB1 = -12mA, IB2 = 12mA
C
*
1:Base 2:Collector 3:Emitter N Type Package (DS)
Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = - 0.5A VCE = -3V, IC = -3A VCE = -3V, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VCE = -10V, IC = - 0.5A, f = 1MHz
min
typ
max -200 -200 -500 -500 -2
4.40.5
-60 -80 1000 2000 10000 -2.5 -2 -4 15 0.3 2 0.5
14.70.5
+0.4
+0
Unit A A mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
V V MHz s s s
Rank classification
Q P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE2
E
1
Power Transistors
PC -- Ta
50 -6 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C -5 IB=-3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA -3 - 0.4mA - 0.3mA - 0.2mA -1 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 0 0
2SB938, 2SB938A
IC -- VCE
-10 VCE=-3V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
(1) 30
-4
Collector current IC (A)
40
-8
-6 TC=100C -4
25C -25C
20
-2
10
-2
- 0.8
-1.6
-2.4
-3.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 IC/IB=250 -30 -10 -3 -1 TC=100C 25C -25C 106
hFE -- IC
10000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=-3V IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 - 0.1 - 0.3
105
TC=100C 104
25C
- 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3
-25C 103
102 -1 -3 -10 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10
-1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
-100 -30 103 Non repetitive pulse TC=25C ICP t=1ms 10ms -1 300ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 -3
IC
- 0.3 - 0.1 - 0.03 - 0.01 -1
1
2SB938A
10-1
2SB938
-3
-10
-30
-100 -300 -1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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