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| Power Transistors 2SB931 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1254 10.00.3 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings -130 -80 -7 -6 -3 30 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 1.5-0.4 A 2.0 3.0-0.2 A W 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 C C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = - 0.5A IC = -2A, IB = - 0.1A IC = -2A, IB = - 0.1A VCE = -10V, IC = - 0.5A, f = 10MHz IC = - 0.5A, IB1 = -50mA, IB2 = 50mA 30 0.3 1.1 0.3 -80 45 90 260 - 0.5 -1.5 V V MHz s s s min typ max -10 -50 Unit A A V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 4.40.5 14.70.5 V 10.00.3 V +0.4 +0 1 Power Transistors PC -- Ta 40 -6 TC=25C (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) 2SB931 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=20 -30 -10 -3 -1 VCE(sat) -- IC Collector power dissipation PC (W) -5 30 Collector current IC (A) (1) IB=-100mA -4 -80mA -60mA -3 -40mA -30mA -2 -20mA -16mA -12mA -8mA -4mA 0 20 - 0.3 TC=100C -25C - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 25C 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 -1 0 -2 -4 -6 -8 -10 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 10000 IC/IB=20 hFE -- IC 10000 VCE=-2V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -10 -3 -1 TC=-100C -25C 25C 1000 300 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 25C TC=100C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 -30 3000 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-50V Ta=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) -10 -3 -1 ICP IC 10ms t=0.5ms 1ms tstg ton tf - 0.3 - 0.1 - 0.03 - 0.01 -1 300ms -1 -3 -10 -30 -100 0 - 0.8 -1.6 -2.4 -3.2 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 2SB931 Thermal resistance Rth(t) (C/W) 102 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of 2SB931
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