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| Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -50 -40 -5 -3 -1.5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC-71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE *1 Conditions VCB = -20V, IE = 0 VCE = -10V, IB = 0 VEB = -5V, IC = 0 IC = -1mA, IE = 0 IC = -2mA, IB = 0 VCE = -5V, IC = IC = -2A, IB = -1A*2 IC = -1.5A, IB = -0.15A*2 -0.2A*2 VCB = -5V, IE = 0.5A, f = 200MHz VCB = -20V, IE = 0, f = 1MHz min typ max -1 -100 -10 -50 -40 80 220 -1 -1.5 150 45 *2 4.10.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 Unit A A A V V VCE(sat) VBE(sat) fT Cob V V MHz pF Pulse measurement *1h FE Rank classification Q 80 ~ 160 R 120 ~ 220 Rank hFE 1 Transistor PC -- Ta 1.2 -4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. -3.5 2SB819 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IB=-40mA -35mA -100 -30 -10 -3 -1 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (A) -3.0 -2.5 -2.0 -1.5 -1.0 -30mA -25mA -20mA -15mA -10mA -5mA 0.8 0.6 0.4 - 0.3 - 0.1 - 0.03 0.2 - 0.5 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC IC/IB=10 600 VCE=-5V 240 fT -- I E VCB=-5V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 75C Ta=-25C Forward current transfer ratio hFE 200 400 160 300 Ta=75C 25C 120 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 200 -25C 80 100 40 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 10 30 100 300 1000 3000 10000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 150 -60 VCER -- RBE 1000 Ta=25C ICEO -- Ta VCE=-12V Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C 120 -50 300 -40 ICEO (Ta) ICEO (Ta=25C) 0.01 0.1 1 10 100 90 -30 30 60 -20 10 30 -10 3 0 -1 -3 -10 -30 -100 0 0.001 1 0 20 40 60 80 100 120 Collector to base voltage VCB (V) Base to emitter resistance RBE (k) Ambient temperature Ta (C) 2 Transistor Area of safe operation (ASO) -10 -3 ICP IC Single pulse Ta=25C t=10ms 2SB819 Collector current IC (A) -1 t=1s - 0.3 - 0.1 - 0.03 - 0.01 - 0.003 - 0.001 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) 3 |
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