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| Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -120 -120 -7 -50 -20 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Collector 3:Emitter 3 0.550.1 1.250.05 0.450.05 2 1 2.5 2.5 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -20mA, IB = -2mA VCB = -5V, IE = 2mA, f = 200MHz VCE = 40V, IC = -1mA, GV = 80dB, Rg = 100k, Function = FLAT 150 150 -120 -120 -7 180 700 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 4.10.2 High collector to emitter voltage VCEO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 1 Transistor PC -- Ta 500 -60 VCE=-5V 450 -50 25C 2SB788 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -40 Ta=75C -25C -30 -20 - 0.3 - 0.1 25C Ta=75C -10 -25C - 0.03 - 0.01 - 0.1 - 0.3 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-5V 320 280 240 200 160 120 80 40 0 - 0.1 - 0.3 0 0.1 fT -- I E 5 Cob -- VCB Collector output capacitance Cob (pF) VCB=-10V Ta=25C IE=0 f=1MHz Ta=25C 4 Forward current transfer ratio hFE 500 Ta=75C 400 25C -25C Transition frequency fT (MHz) 3 300 2 200 100 1 -1 -3 -10 -30 -100 0.3 1 3 10 30 100 0 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) NV -- IC 120 VCE=-10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 80 Rg=100k 60 22k 40 4.7k 20 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector current IC (mA) 2 |
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