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| Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) Ratings -80 -80 -5 -1 - 0.5 * 2.60.1 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 marking EIAJ:SC-62 Mini Power Type Package 1 150 -55 ~ +150 1cm2 Marking symbol : C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA*2 VCE = -5V, IC = -500mA*2 IC = -300mA, IB = -30mA*2 IC = -300mA, IB = -30mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max - 0.1 -80 -80 -5 90 50 100 - 0.2 - 0.85 120 20 *2 2.50.1 +0.25 Unit A V V V 330 -0.4 -1.2 V V MHz 30 pF Pulse measurement *1h FE1 Rank classification Rank hFE1 Q 90 ~ 155 CQ R 130 ~ 220 CR S 185 ~ 330 CS Marking Symbol 1 Transistor PC -- Ta 1.4 2SB767 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -1.2 Ta=25C -1.0 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA -10 -3 -1 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) - 0.8 - 0.3 Ta=75C 25C -25C - 0.1 - 0.03 - 0.01 0.8 - 0.6 0.6 - 0.4 0.4 0.2 - 0.2 - 0.003 - 0.001 -1 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -3 -10 -30 -100 -300 -1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC -100 hFE -- IC IC/IB=10 300 VCE=-10V 200 180 250 fT -- I E VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) -100 -300 -1000 -30 -10 -3 -1 Ta=-25C 75C Forward current transfer ratio hFE 160 140 120 100 80 60 40 20 200 Ta=75C 25C 25C 150 -25C 100 - 0.3 - 0.1 - 0.03 - 0.01 -1 50 -3 -10 -30 -100 -300 -1000 0 -1 0 -3 -10 -30 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 50 -10 IE=0 f=1MHz Ta=25C -3 Area of safe operation (ASO) Single pulse Ta=25C Collector output capacitance Cob (pF) 45 40 35 30 25 20 15 10 5 0 -1 Collector current IC (A) -1 ICP IC t=10ms - 0.3 t=1s - 0.1 - 0.03 - 0.01 - 0.003 - 0.001 - 0.1 - 0.3 -3 -10 -30 -100 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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