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| Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm s Features q q q q 16.20.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -130 -80 -7 -20 -10 70 3 150 -55 to +150 Unit V V V 21.00.5 15.00.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 0.7 15.00.3 11.00.2 5.00.2 3.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 A A W C C 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -3A VCE = -2V, IC = -6A IC = -6A, IB = - 0.3A IC = -10A, IB = -1A IC = -6A, IB = - 0.3A IC = -10A, IB = -1A VCE = -10V, IC = - 0.5A, f = 10MHz IC = -6A, IB1 = - 0.6A, IB2 = 0.6A, VCC = -50V 30 0.5 1.0 0.2 -80 45 90 30 - 0.5 -1.5 -1.5 -2.5 V V V V MHz s s s 260 min typ max -10 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 120 -20 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C IB=-400mA 2SB1154 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 VCE(sat) -- IC (1) IC/IB=10 (2) IC/IB=20 TC=25C Collector power dissipation PC (W) 100 Collector current IC (A) -16 -250mA -200mA -12 -160mA -120mA -100mA -8 -80mA -60mA -40mA -4 -20mA 0 -3 (2) 80 (1) 60 -1 (1) - 0.3 40 - 0.1 20 (3) 0 0 25 (2) - 0.03 50 75 100 125 150 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -10 IC/IB=10 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 1000 -30 -10 -3 25C -1 TC=-25C 100C hFE -- IC VCE=-2V -3 25C -1 Forward current transfer ratio hFE 300 TC=100C 25C 100 -25C 30 - 0.3 TC=100C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 - 0.1 10 - 0.03 3 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -1 -3 -10 1 - 0.1 - 0.3 -1 -3 -10 -30 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IC 1000 300 100 30 10 3 1 0.3 0.1 - 0.01 - 0.03 - 0.1 - 0.3 VCE=-10V f=10MHz TC=25C 100 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-50V TC=25C tstg ton tf Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C t=1ms 10ms -3 -1 DC Transition frequency fT (MHz) Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) -8 -10 - 0.3 - 0.1 - 0.03 - 0.01 -1 -1 -3 -10 0 -1 -2 -3 -4 -5 -6 -7 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1154 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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