 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 4.00.2 s Features q q q 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -120 -120 -5 -50 -20 300 150 -55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW C C 1:Emitter 2:Collector 3:Base 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -20mA, IB = -2mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -40V, IC = -1mA, GV = 80dB, Rg = 100k, Function = FLAT 200 150 -120 -120 -5 180 520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 hFE Rank 2.00.2 marking +0.2 0.45-0.1 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. 3.00.2 1 Transistor PC -- Ta 500 -24 Ta=25C 450 -20 -50 25C Ta=75C 2SB1036 IC -- VCE -60 VCE=-5V IC -- VBE Collector power dissipation PC (mW) -45A -16 -40A -35A -12 -30A -25A -8 -20A -15A -4 -10A -5A 0 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) Collector current IC (A) 400 IB=-50A -40 -25C -30 -20 -10 0 0 -2 -4 -6 -8 -10 -12 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 - 0.1 - 0.3 hFE -- IC 160 VCE=-5V fT -- I E VCB=-5V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 140 120 100 80 60 40 20 0 0.1 Ta=75C 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 25C -25C -1 -3 -10 -30 -100 -1 -3 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 120 IE=0 f=1MHz Ta=25C NV -- IC VCE=-10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 100 Noise voltage NV (mV) 80 Rg=100k 60 22k 40 4.7k 20 -3 -10 -30 -100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
Price & Availability of 2SB1036
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |