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| Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 -0.1 Unit: mm 3.20.2 Features * High collector-base voltage (Emitter open) VCBO * High collector-emitter voltage (Base open) VCEO * Large collector power dissipation PC * Low collector-emitter saturation voltage VCE(sat) 3.160.1 3.80.3 11.00.5 1.90.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -400 -400 -5 -100 -200 1.2 150 -55 to +150 Unit V V V 1 2 3 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 1.760.1 mA mA W C C Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = -100 A, IE = 0 IC = -500 A, IB = 0 IE = -100 A, IC = 0 VCE = -5 V, IC = -30 mA IC = -50 mA, IB = -5 mA IC = -50 mA, IB = -5 mA VCB = -30 V, IE = 20 mA, f = 200 MHz VCB = -30 V, IE = 0, f = 1 MHz 70 9 Min -400 -400 -5 30 -2.5 -1.5 Typ Max Unit V V V V V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.050.1 Publication date: March 2003 SJD00036BED 1 2SB1011 PC Ta 1.6 Without heat sink -120 IC VCE TC=25C IC VBE -120 VCE=-5V 25C Collector power dissipation PC (W) -100 -100 -0.9mA -80 Collector current IC (mA) 1.2 Collector current IC (mA) TC=75C -0.8mA -0.7mA IB=-1mA -80 0.8 -60 -0.4mA -0.6mA -0.5mA -0.3mA -0.2mA -60 -40 -40 -25C 0.4 -20 -0.1mA -20 0 0 0 40 80 120 160 0 -2 -4 -6 -8 -10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 hFE IC 240 VCE=-5V fT I E 120 VCB=-30V f=200MHz TC=25C Forward current transfer ratio hFE -10 Ta=75C 160 Transition frequency fT (MHz) -10 -100 200 100 80 -1 TC=75C 25C -25C 120 25C -25C 60 80 40 - 0.1 40 20 - 0.01 - 0.1 -1 -10 -100 0 - 0.1 -1 0 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 30 IE=0 f=1MHz TC=25C Sefe operation area -1 000 ICP Single pulse TC=25C t=10ms 25 Collector current IC (A) -100 t=100ms IC t=1s 20 15 -10 10 -1 5 - 0.1 -1 0 -1 -10 -100 -10 -100 -1 000 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJD00036BED 2SB1011 Rth t 104 free air Thermal resistance Rth (C/W) 103 102 10 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00036BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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