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| Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Features * Low collector to emitter saturation voltage VCE(sat) , large current capacitance * High-speed switching * Mini type 3-pin package, allowing downsizing and thinning of the equipment. * Complementary pair with 2SC5592 1 0.40+0.10 -0.05 3 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 2 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 1.1+0.2 -0.1 (0.65) I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -15 -15 -5 -10 -2.5 600 150 -55 to +150 Unit V V V A A mW C C Marking Symbol: AS Note) *: Measure on the ceramic substrate at 15 x 15 x 0.6 mm3. I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) Cob fT ton tstg toff Conditions VCB = -10 V, IE = 0 IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = -100 mA VCE = -2 V, IC = -2.5 A IC = -1 A, IB = -10 mA IC = -2.5 A, IB = -50 mA Collector output capacitance Transition frequency Turn-on time *2 Storage time *2 Turn-off time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA f = 200 MHz -15 -15 -5 200 100 -140 -270 40 180 35 110 10 -320 mV mV pF MHz ns ns ns 560 Min Typ Max - 0.1 Unit A V V V Note) *1: Rank classification *2: Reference to the measurement circuit. 0 to 0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) 1.1+0.3 -0.1 0.40.2 5 1 2SA2010 I Measurement Circuit Transistors Input RB IB2 IB1 Output RL 470 F VCC = -5 V PW = 20 s DC 1% -201B1 = 201B2 = IC = -1.5 A 2 |
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