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| Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 5.00.2 4.00.2 q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max -100 -1 Unit nA A V V V -25 -20 -7 90 25 - 0.4 -1.2 150 15 *2 220 V V MHz 25 pF Pulse measurement *1h FE Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 Note) S Rank VCEO 18V. 1 Transistor PC -- Ta 800 -1.2 Ta=25C 700 -1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10A 2SA1128 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (A) - 0.8 -9A -8A -7A -6A -5A -4A -3A -2A -1A - 0.6 - 0.4 - 0.3 - 0.1 - 0.03 Ta=75C 25C -25C - 0.2 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC IC/IB=10 600 VCE=-2V 320 fT -- IE VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 -1 Ta=-25C 75C 25C Forward current transfer ratio hFE 280 240 200 160 120 80 40 400 300 Ta=75C 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 200 -25C 100 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 80 Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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