| PART |
Description |
Maker |
| BA3131FS BA3131 |
Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2)
ER 14C 14#16 PIN PLUG
Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2)
Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| MC1458 MC1458D SA1458N MC1458N MC1558N SA1458 SA14 |
General purpose operational amplifier(???杩???惧ぇ??
General purpose operational amplifier 通用运算放大
General purpose operational amplifier DUAL OP-AMP, 7500 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
Battery-Backup Supervisor for Low Power Processors 14-TSSOP -40 to 85
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| AU2904 AU2904NNBSP AU2904DNBSP AU2904D |
From old datasheet system
Voltage-Feedback Operational Amplifier
Low power dual operational amplifier
|
Philips Semiconductors
|
| K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S6432 |
2M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 12k × 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| EL2242J EL2242J_883B EL2224CJ EL2224J EL2224J_883B |
Dual 60MHz Unity Gain Stable, Operational Amplifier
Voltage-FeedbackOperationalAmplifier
Dual 60Mhz Unity Gain Stable Operational Amplifier
400MHz Multiplexing Amplifier; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R
|
ELANTEC[Elantec Semiconductor]
|
| OP271 OP271FZ |
18V; 25mA; high speed, dual operational amplifier
HIGH SPEED DUAL OPERATIONAL AMPLIFIER
From old datasheet system
|
AD
Analog Devices
|
| TA75358CF TA75358CS TA75358CP E003446 PA75358CP |
SILICON MONOLITHIC (DUAL POERATIONAL AMPLIFIER)
DUAL OPERATIONAL AMPLIFIER
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LT1002 LT1002A LT1002AC LT1002ACJ LT1002ACN LT1002 |
Dual / Matched Precision Operational Amplifier
Dual, Matched Precision Operational Amplifier
From old datasheet system
|
LINER[Linear Technology]
|
