| PART |
Description |
Maker |
| PUMA67E4007AM-25 PUMA67E4007AM-25E PUMA67E4007-20 |
x32 EEPROM Module
150NS, TSOP, IND TEMP(EEPROM)
150NS, PDIP, IND TEMP(EEPROM)
150NS, FLATPACK, 883C; LEV B CMPLNT(EEPROM)
150NS, PLCC, COM TEMP(EEPROM)
200NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
150NS, 44LCC, 883C; LEV B COMPLIANT(EEPROM)
350NS,PGA,883C; LEVEL B FULLY COMPLIANT(EEPROM)
150NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, 32LCC, 883C; LEV B COMPLIANT(EEPROM)
250NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
150NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
250NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
150NS, PLCC, AUTO TEMP(EEPROM) X32号的EEPROM模块
150NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM) X32号的EEPROM模块
200NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM) X32号的EEPROM模块
DIE(EEPROM) X32号的EEPROM模块
200NS, PDIP, IND TEMP(EEPROM)
|
Microtips Technology, Inc.
Amphenol, Corp.
TE Connectivity, Ltd.
|
| AM-427-1A AM-427-2B AM-427-1B |
200NS, 32LCC, 883C; LEV B COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) 电压反馈运算放大
|
Honeywell International, Inc.
|
| BUK9M8R5-40H |
N-channel 40 V, 8.5 mlogic level MOSFET in LFPAK33
|
Nexperia
|
| PSMN2R6-30YLC |
N-channel 30 V 2.8 mlogic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| PSMN2R2-30YLC |
N-channel 30 V 2.15 mlogic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| PSMN3R3-60PL |
N-channel 60 V, 3.4 mlogic level MOSFET in SOT78
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
|
NXP Semiconductors
|
| ADP3412 ADP3412JR |
Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85
Dual MOSFET Driver with Bootstrapping
|
Analog Devices, Inc.
AD[Analog Devices]
|
| PSMN1R0-30YLC PSMN1R0-30YLC11 |
N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 1.15 mlogic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors N.V.
|
| PSMN1R3-30YL |
N-channel 30 V 1.3 mlogic level MOSFET in LFPAK
N-channel 30 V 1.3 m楼? logic level MOSFET in LFPAK
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
N-channel 30 V 1.3 m logic level MOSFET in LFPAK
|
NXP Semiconductors N.V.
|
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
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