PART |
Description |
Maker |
BTA08-600C |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
BTA10-600C |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
BUZ215-E3045 |
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG Infineon Technologies AG
|
D44H11TU |
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220AB, 3 PIN
|
Fairchild Semiconductor, Corp.
|
CYNA25-1200 |
25 A, 1200 V, SCR, TO-220AB TO-220AB, 3 PIN
|
Crydom, Inc.
|
MAC212-10-A16A MAC212-8-N MAC212-4-N |
800 V, 12 A, TRIAC, TO-220AB 600 V, 12 A, TRIAC, TO-220AB 200 V, 12 A, TRIAC, TO-220AB
|
MOTOROLA INC
|