| PART |
Description |
Maker |
| SIC788A |
50 A VRPower? Integrated Power Stage
|
Vishay Siliconix
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| MRFIC1818 |
1700-1900 MHz MMIC DCS1800/PCS1900 INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| IRIS4011K IRIS4011 2189 IRISMPS2 |
INTEGRATED SWITCHER 多功能开
AC-DC flyback power supply, IRIS4011(K), universal input, 12VOUT, 2A IOUT
60W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
60W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
From old datasheet system
|
International Rectifier, Corp.
IRF[International Rectifier]
http://
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| TPD1032F EA09195 |
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
From old datasheet system
2-IN-1 Low-Side Power Switch for Motor, Solenoid and lamp Drivers
|
TOSHIBA[Toshiba Semiconductor]
|
| NCP1081 NCP1081DEG NCP1081DER2G |
Integrated 40 W High Power PoE-PD & DC-DC Converter Controller (IEEE 802.3at Draft 3.0) SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO20
Integrated High Power PoE-PD Interface & DC-DC Converter Controller
|
ON Semiconductor
|
| AWT9221S11 AWT921S11 |
Integrated high power amp 900 MHz
Integrated High Power Amp 900 MHz Advanced Product information
|
Anadigics Inc
|
| NTE1333 |
Integrated Circuit Module, Hybrid, Audio Power Amp, 40W, 2 Power Supplies Req’d
Integrated Circuit Module / Hybrid / Audio Power Amp / 40W / 2 Power Supplies Reqd
|
NTE[NTE Electronics]
|
| ICE1PD265G |
Integrated Power ICs - PFC IC/CoolMOS one-package combination
Power Factor Controller Cool- MOS: BoostSET IC for High Power Factor and low THD
|
INFINEON[Infineon Technologies AG]
|
|
