| PART |
Description |
Maker |
| PHT |
High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant
|
Vishay Siliconix
|
| MS-MK92-02XA5 MS-MK92-03XA5 MS-MK92-04XA5 MS-MK94- |
FEP, high and low temperature and chemical agents resistant
|
SHIELD s.r.l.
|
| TX7-705CM-SQ-HPG |
High shock resistant, low G-sensitivity 0.3 ppb/g temperature compensated CMOS SMD TCXO
|
QUARTZCOM the communica...
|
| RT-1116 |
Thermofit DR-25 Tubing Elastomeric, Fluid Resistant, Abrasion Resistant, Flexible, Heat-Shrinkable
|
Tyco Electronics
|
| DNF18-188-M |
DISCONNECT,FEMLE NYL RoHS Compliant: Yes 1 mm2, BRASS, TIN FINISH, WIRE TERMINAL
|
Panduit, Corp.
|
| 009-0631-900 009-0933-900 009-0089-900 009-0172-90 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| 091-0094-900 009-0270-900 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| 099-0075-900 099-0051-900 099-0135-900 099-0167-90 |
Ultra-high leak integrity media resistant soleniod valves
|
Sensortechnics GmbH
|
| PN12-10HDRX-L |
TERM RING HVY NYL 16-12AWG#10 RING TERMINAL
|
Panduit, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil
|
| NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
