| PART |
Description |
Maker |
| P-17EBH-015SXX-XX0 |
high temperature resistant nylon
|
Amphenol Corporation
|
| RT-555-3 |
High Temperature, Heat-Shrinkable, Fluid Resistant Sealing Sleeves
|
Tyco Electronics
|
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
| P-17EHD-026XXX-X00 |
high temperature resistant nylon
|
Amphenol Corporation
|
| 009-0631-900 009-0933-900 009-0089-900 009-0172-90 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| VX6 VX6-3XXH VX6-5XXH |
Thru-hole VCXO HCMOS / TTL High shock and vibration resistant
|
QUARTZCOM the communications company
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| OSRRJ23131A |
3mm Round Red & Red LED UV Resistant Epoxy/ Water Clear Type High Luminous LEDs
|
OptoSupply International
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
