| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| CY7C1010DV33-10ZSXIT |
2-Mbit (256 K 8) Static RAM
|
Cypress
|
| CY62138FV30LL-45BVXI CY62138FV30LL-45BVXIT CY62138 |
2-Mbit (256 K 8) Static RAM
|
Cypress
|
| CY62158ELL-45ZSXI |
8-Mbit (1 M x 8) Static RAM Automatic power down when deselected
MoBL® 8-Mbit (1M x 8) Static RAM 1M X 8 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1041CV33-12BAXE CY7C1041CV33-10ZSXA CY7C1041CV |
4-Mbit (256 K × 16) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| CY62168DV3009 CY62168DV30LL-55BVI |
16-Mbit (2M x 8) MoBL垄莽 Static RAM
16-Mbit (2M x 8) MoBL Static RAM
|
Cypress Semiconductor
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
