| PART |
Description |
Maker |
| APTDF60H1201G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H100G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H601G |
FRED 50-1700V
|
Microsemi
|
| APT30DF60HJ |
FRED 50-1700V
|
Microsemi
|
| APT30DF100HJ |
FRED 50-1700V
|
Microsemi
|
| APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| BYP300 |
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
Infineon
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| 2MBI550VJ-170-50 |
IGBT MODULE (V series) 1700V / 550A / 2 in one package
|
Fuji Electric
|
| 2MBI650VXA-170E-50 |
IGBT MODULE (V series) 1700V / 650A / 2 in one package
|
Fuji Electric
|
