PART |
Description |
Maker |
APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
LSIC2SD120A05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package) SiC Schottky Barrier Diodes
|
ROHM ROHM Co., Ltd.
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|