| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| KF3N80F |
High Voltage MOSFETs
|
Korea Electronics (KEC)
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| SML80S13 SML10S75XX SML20S67 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
|
| SML50S30 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Seme LAB
|
| SML50H19 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Seme LAB
|
| IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
|
| SML50C15 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SemeLAB
Seme LAB
|
| SML50L47 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Seme LAB
|
| SML10L100 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SemeLAB
SEME-LAB[Seme LAB]
|
