| PART |
Description |
Maker |
| IS45VM32160E-6BLA1 IS45VM32160E-6BLA2 |
4M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42SM32200K-75BLI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS46LR32160C |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS46LR32800G-5BLA1 IS46LR32800G-5BLA2 IS43LR32800G |
2M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS42SM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
|
| TCS59S6408CFTL-80 TCS59S6408CFT-80 TCS59S6408CFTL- |
2M×4Banks×8Bits Synchronous DRAM(2M×8位同步动态RAM) 200万4Banks × 8位同步DRAM00万8位同步动态RAM）的
4M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
|
Toshiba Corporation
Toshiba, Corp.
|
| W9812G2GB-6 W9812G2GB-6I W9812G2GB-75 W9812G2GB |
1M 】 4 BANKS 】 32BITS SDRAM
|
Winbond
|
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
