| PART |
Description |
Maker |
| ADL5317 ADL5317-EVAL ADL5317ACPZ-REEL7 ADL5317ACPZ |
Avalanche Photodiode Bias Controller and Wide Range (5 nA to 5 mA) Current Monitor
|
ANALOG DEVICES INC
|
| SSO-AD-800-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500NIR-TO52-S1 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| SSO-AD-230NIR-TO52-S1 |
Avalanche Photodiode NIR
|
Roithner LaserTechnik GmbH
|
| C30645E C30662E |
InGaAs Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| APD-1310-VF APD-1310-VFA APD-1310-VL APD-1310-VLA |
InGaAs Avalanche PHOTODIODE with 50/125 um Fiber Pigtail
|
Optoway Technology Inc.
|
| APD-1310 APD-1310-XFA APD-1300-XLA APD-1310-XLA AP |
InGaAs Avalanche PHOTODIODE with Single-Mode Pigtail
|
Optoway Technology Inc
|
| SD197-70-74-591 |
Cooled Large Area Blue Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| SD630-70-75-500 |
Non-Cooled Large Area DUV Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| C30724P |
LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package)
|
List of Unclassifed Manufacturers
|
| APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
