| PART |
Description |
Maker |
| 1214GN-180LV |
GaN Transistors
|
Microsemi
|
| 0912GN-300 |
GaN Transistors
|
Microsemi
|
| 0510GN-25-CP |
GaN Transistors
|
Microsemi
|
| 0912GN-600 |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| GM20022010D |
GaN MMIC
|
RFHIC
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| 383UWC |
WHITE GaN LED
|
Roithner LaserTechnik GmbH
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| PDU-G106B-SM |
UV Enhanced GaN Detectors
|
Advanced Photonix, Inc.
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
|
