| PART |
Description |
Maker |
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HMC999 HMC999-12 |
GaN MMIC 10 WATT POWER AMPLIFIER
|
Hittite Microwave Corpo...
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MJE800T MJE800 MJE702 MJE703 MJE803 MJE700T MJE700 |
From old datasheet system
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
