| PART |
Description |
Maker |
| GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
Dual Double Data Rate interface
72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
| GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I |
72Mb SigmaQuad-II Burst of 4 SRAM
|
http://
GSI Technology
|
| GS8182Q18D-200 GS8182Q18D-200I GS8182Q18D-167 GS81 |
18Mb Burst of 2 SigmaQuad-II SRAM
|
GSI[GSI Technology]
|
| GS8342Q36E-300 GS8342Q08E-200 GS8342Q08GE-200I GS8 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8342D09E-250I GS8342D09GE-200I GS8342D09E-167I G |
36Mb SigmaQuad-II Burst of 4 SRAM
36Mb SigmaQuad-II Burst of 4 SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165
36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
|
Sanyo Denki Co., Ltd.
GSI Technology, Inc.
|
| GS81302DT19AGD-450 GS81302DT19AGD-450I GS81302DT19 |
144Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
|
GSI Technology
|
| GS8180DV18D-133I GS8180DV18D-200I GS8180DV18D-250 |
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.3 ns, PBGA165
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.1 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8180QV36D-133 |
18Mb Burst of 2 SigmaQuad SRAM 512K X 36 STANDARD SRAM, 3 ns, PBGA165
|
GSI Technology, Inc.
|
| K4C89083AF K4C89093AF |
288Mb x18 Network-DRAM2 Specification
|
Samsung semiconductor
|
| MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
| ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
288Mb RLDRAM Component
|
STMicroelectronics
意法半导
|
