PART |
Description |
Maker |
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
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IRF[International Rectifier] International Rectifier, Corp.
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IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
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IRF[International Rectifier] International Rectifier, Corp.
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FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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IRFPC60LC-P IRFPC60LC-PPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247SM package TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC TO-247AC, 3 PIN
|
International Rectifier Vishay Intertechnology, Inc.
|
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
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IRF[International Rectifier]
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IRFBC40 IRFBC42 FBC40 |
6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs 6.2A.4A00V的,1.2.6 Ohm的N通道功率MOSFET
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Harris Semiconductor International Rectifier Harris Corporation Harris, Corp.
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STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
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STMicroelectronics
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