| PART |
Description |
Maker |
| STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
|
ST Microelectronics
|
| STGP15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
| AUIRGPS4070D0 |
Low VCE (on) Trench IGBT Technology
|
Infineon Technologies A...
|
| STGD4M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
|
STMicroelectronics
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| XRT8020IL XRT8020 RT8020IL |
650 MHZ CLOCK & CRYSTAL MULTIPLIER WITH LVDS OUTPUTS
650 MHZ CLOCK & CRYSTAL MULTIPLIER WITH LVDS OUTPUTS
650 MHz High-Speed Clock Synthesizer
|
EXAR[Exar Corporation]
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SD1615 |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
| STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 CD0022 |
High dv/dt capability
N-channel 650 V, 0.070 Ω, 33 A MDmesh?V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 Ω, 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
|
STMicroelectronics
ST Microelectronics
|
