| PART |
Description |
Maker |
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| UPG2227T5F-E2-A UPG2227T5F |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| UPG2031TQ-E1-A UPG2031TQ |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| UPG2012TK UPG2012TK-E2 |
NECs ? W SINGLE CONTROL L, S-BAND SPDT SWITCH
NECs W SINGLE CONTROL L/ S-BAND SPDT SWITCH
|
NEC
|
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| UPG2008TK UPG2008TK-E2 |
NECs L,S BAND ULTRA SMALL SPDT GaAs MMIC SWITCH
|
California Eastern Labs
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| TLP559 |
Photocoupler GaA .As Ired & Photo IC
|
TOSHIBA
|
