| PART |
Description |
Maker |
| OM6017SA OM6018SA OM6019SA OM6020SA OM6019SW OM602 |
200V Single N-Channel Hi-Rel MOSFET in a D3 package
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
400V Single N-Channel Hi-Rel MOSFET in a D3 package
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
500V Single N-Channel Hi-Rel MOSFET in a D3 package
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 400V单N沟道高可靠性的D3的封装MOSFET
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
Microsemi, Corp.
|
| E142-SERIES M342-SERIES T242-SERIES X242-SERIES E2 |
Transient Voltage Suppressor Diodes
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3910 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7862PBF with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB260N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9410 with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR4343 with Standard Packaging
Peripheral IC 外围芯片
|
Bourns, Inc.
Hoffman
TOKO, Inc.
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| AM29F040-120/BUA AM29F040-120/BXA AM29F040-150DEB |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3315S with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3315S with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR8721PBF with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ34E with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU120Z with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR48Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL3803L with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ24NS with Lead Free Packaging
x8 Flash EEPROM x8闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| NTMFS4120N NTMFS4120NT1G NTMFS4120NT3G |
Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead ; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead
|
ON Semiconductor
|
| NTD78N03-35G NTD78N03T4G NTD78N03-1G NTD78N03.1G N |
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: 3 IPAK, Straight Lead; No of Pins: 3; Container: Rail; Qty per Container: 75 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75
Power MOSFET 25 V, 78 A, Single N?Channel, DPAK
|
ON Semiconductor
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFZ34NL IRFZ34NS IRFZ34NSTRL IRFZ34NSTRR |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
|
| IRF5EA1310 IRF5EA1310PBF |
23 A, 100 V, 0.036 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
International Rectifier
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
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