| PART |
Description |
Maker |
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| MAGX-001220-1SB1PPR MAGX-001220-100L00 MAGX-001220 |
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
| CGHV1F006S-AMP2 CGHV1F006S-AMP3 CGHV1F006S-AMP1 CG |
6 W, DC - 18 GHz, 40V, GaN HEMT
|
Cree, Inc
|
| CGHV27030S |
GaN HEMT
|
CREE
|
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
|
