| PART |
Description |
Maker |
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| CY7C1263XV18 CY7C1265XV18-633BZXC CY7C1263XV18-600 |
36-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| S29NS-N S29NS064N0SBJW000 S29NS128N0SBJW003 S29NS0 |
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48
|
Spansion Inc.
Spansion, Inc.
|
| S29CD016J1JFAM033 S29CD016J1JFAM133 S29CD016J0JFAM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 32/16兆位的CMOS 2.6伏或3.3伏，只有同时写，双启动，突发模式闪存记忆体与VersatileI /输出
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| CY7C1557V18-300BZI CY7C1557V18-300BZXC CY7C1557V18 |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1150V18-333BZC CY7C1150V18-333BZI CY7C1150V18- |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
