| PART |
Description |
Maker |
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| US2410 |
N-Ch 20V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electr...
Unitpower Technology Li...
|
| CDSV3-204-G CDSV3-204-G12 |
Switching Diodes Array, V-RRM=20V, V-R=20V, P-D=200mW, I-F=100mA
Small Signal Switching Diodes
|
Comchip Technology
|
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| IRF1902 IRF1B902 IRF1902TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)
|
International Rectifier
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| EN9010A EN9010 |
N-Channel Power MOSFET, 20V, 7.5A, 17mOhm, Dual ECH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SF100CB100 |
From old datasheet system
Isolated power MOSFET module designed for fast switching applications of high voltage and current with a fast recovery diode
|
SANREX[SanRex Corporation]
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
