| PART |
Description |
Maker |
| IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXSH30N60B2D1 |
High Speed IGBT with Diode
|
IXYS Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| PG-TO220-3-FP IKA15N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IKW50N65EH5 IKW50N65EH5-15 |
650V DuoPack IGBT and full-rated diode High speed series fifth generation
|
Infineon Technologies A...
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
