| PART |
Description |
Maker |
| IPT1608-SEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0406-25F IPT0406-18F |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| SPGN0365A SPGP0365A |
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
|
SemiHow Co.,Ltd.
|
| STN4536 |
Due N Channel Enhancement Mode MOSFET
|
Stanson Technology
|
| A4401 |
This device provides all the necessary control functions to provide the power rails for driving a vacuum fluorescent display (VFD) using minimal external components.
|
Allegro MicroSystems
|
| IXA27IF1200HJ |
Easy paralleling due to the positive temperature coefficient of the on-state voltage
|
IXYS Corporation
|
| MC74HC132AD MC74HC132A MC54HC132A MC74HC132 MC74HC |
High?Performance Silicon?Gate CMOS
QUAD 2-INPUT NAND GATE WITH SCHMITT-TRIGGER INPUTS HIGH-PERFORMANCE SILICON-GATE CMOS
QUAD 2-INPUT NAND GATE WITH SCHLITT-TRLGGER INPUTS
From old datasheet system
|
Motorola, Inc
ON Semi
MOTOROLA[Motorola Inc]
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FAN73611 FAN73611MX |
High Side Gate Driver
Single-Channel High-Side Gate Drive IC
|
Fairchild Semiconductor
|
